Combined binary oxide semiconductor device

• US 7,282,782 B2
• Filed: 03/12/2004
• Issued: 10/16/2007
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Primary Examiner(s): PIZARRO CRESPO, MARCOS D
• Application Number:
  US10/799,318
• Publication Number:
  US 20050199879A1
• Time in Patent Office: 1,313 Days
• Field of Search: 257/76, 257/103, 257/613, 257/E33.037, 257/59, 257/72
• US Class Current: 257/613
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

Claims

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

2. The semiconductor device of claim 1, wherein the channel includes an atomic composition of a first metal (A):

second metal (B) ratio (A;

B), wherein A and B are each in a range of about 0.05 to about 0.95.

3. The semiconductor device of claim 1, wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

4. The semiconductor device of claim 1, wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.

5. The semiconductor device of claim 1, wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

6. The semiconductor device of claim 5, wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

7. The semiconductor device of claim 1, wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In₂ O₃ and Ga₂O₃.

8. The semiconductor device of claim 7, wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In₂O₃ and Ga₂O₃, and a third group of SnO₂, GeO₂, PbO₂, and TiO₂.

9. The semiconductor device of claim 8, wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

10. The semiconductor device of claim 9, wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

11. A semiconductor device, comprising:

a drain electrode;

a source electrode;

means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

12. The semiconductor device of claim 11, wherein the means for carrying electron flow includes an atomic composition of a first metal(A):

second metal (B) ratio (A;

B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

13. The semiconductor device of claim 11, wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

14. The semiconductor device of claim 11, wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.

15. The semiconductor device of claim 11, wherein the means for carrying electron flow includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

16. The semiconductor device of claim 15, wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

17. The semiconductor device of claim 11, wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In₂O₃ and Ga₂O₃.

18. The semiconductor device of claim 17, wherein the means for carrying electron flow includes a first binary oxide and a second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In₂O₃, and Ga₂O₃, and a third group of SnO₂, GeO₂, PbO₂, and TiO₂.

19. The semiconductor device of claim 18, wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

20. The semiconductor device of claim 19, wherein the means for carrying electron flow includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

21. A semiconductor device formed by the steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO;

depositing a channel from the precursor composition contacting the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

22. The semiconductor device of claim 21, wherein providing the precursor composition includes step for providing the precursor composition having an atomic composition of a first metal(A):

second metal (B) ratio (A;

B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

23. The semiconductor device of claim 21, wherein forming a channel includes:

step for vaporizing the precursor composition to form vaporized precursor composition; and

depositing the vaporized precursor composition using a physical vapor deposition technique.

24. The semiconductor device of claim 21, wherein providing the precursor composition includes step for providing a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

25. The semiconductor device of claim 24, wherein providing the precursor composition includes step for providing a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

26. The semiconductor device of claim 21, wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In₂O₃ and Ga₂O₃.

27. The semiconductor device of claim 26, wherein providing the precursor composition includes step for providing the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In₂O₃ and Ga₂O₃, and a third group of SnO₂, GeO₂, PbO₂, and TiO₂.

28. The semiconductor device of claim 27, wherein providing the precursor composition includes step for providing the first binary metal oxide, the second binary metal oxide, and a third binary oxide from the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

29. The semiconductor device of claim 28, wherein providing the precursor composition includes providing the first binary metal oxide, the second binary metal oxide, the third binary oxide, and a fourth binary oxide from the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C and D are each different and each in a range of about 0.017 to about 0.95.

30. A display device, comprising:

a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

31. The display device of claim 30, wherein the channel includes an atomic composition of a first metal(A):

second metal (B) ratio (A;

B), wherein A and B are each different and each in a range of about 0.05 to about 0.95.

32. The display device of claim 30, wherein the channel includes a third binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

33. The display device of claim 32, wherein the channel includes a fourth binary oxide from ZnO, CdO, SrO, CaO, and MgO and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

34. The display device of claim 30, wherein the channel includes the first binary oxide and the second binary oxide selected from within one of a first group of ZnO, CdO, SrO, CaO, and MgO and a second group of In₂O₃ and Ga₂O₂.

35. The display device of claim 34, wherein the channel includes the first binary oxide and the second binary oxide selected from within one of the first group of ZnO, CdO, SrO, CaO, and MgO, the second group of In₂O₃ and Ga₂O₂, and a third group of SnO₂, GeO₂, PbO₂, and TiO₂.

36. The display device of claim 35, wherein the channel includes the first binary oxide, the second binary oxide, and a third binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal ratio of A;

B;

C, wherein A, B, and C are each different and each in a range of about 0.025 to about 0.95.

37. The display device of claim 36, wherein the channel includes the first binary oxide, the second binary oxide, the third binary oxide, and a fourth binary oxide selected from within the third group SnO₂, GeO₂, PbO₂, and TiO₂ and having an atomic composition of a first metal:

second metal;

third metal;

fourth metal ratio of A;

B;

C;

D, wherein A, B, C, and D are each different and each in a range of about 0.017 to about 0.95.

38. The display device of claim 37, wherein at least one of the drain electrode, the source electrode, the channel, and gate electrode, and the gate dielectric are substantially transparent.