Micro electrical mechanical system (MEMS) tuning using focused ion beams

• US 7,282,834 B2
• Filed: 06/07/2005
• Issued: 10/16/2007
• Est. Priority Date: 11/01/2002
• Status: Expired due to Fees

• Current Assignee: HRL Laboratories LLC (The Boeing Co.)
• Original Assignee: HRL Laboratories LLC (The Boeing Co.)
• Inventors: Kubena, Randall L., Joyce, Richard J.
• Primary Examiner(s): BUDD, MARK OSBORNE
• Application Number:
  US11/148,389
• Publication Number:
  US 20050269901A1
• Time in Patent Office: 861 Days
• Field of Search: 310/312, 310/321, 310/328
• US Class Current: 310/312
• CPC Class Codes: H03H 3/0077 by tuning of resonance frequency

Abstract

A method for tuning an electro-mechanical device such as a MEMS device is disclosed. The method comprises operating a MEMS device in a depressurized system and using FIB micromachining to remove a portion of the MEMS device. Additionally, a method for tuning a plurality of MEMS devices by depositing an active layer and then removing a portion of the active layer using FIB micromachining. Also, a method for tuning a MEMS device and vacuum packaging the MEMS device in situ are provided.

Claims

1. A method for tuning electro-mechanical devices using focused ion beam (FIB) micromachining, comprising the steps of:

providing a plurality of electro-mechanical devices each electro-mechanical device having an adjustable resonant frequency;

providing a focused ion beam;

depositing an active layer on each electro-mechanical device of the plurality of electro-mechanical devices, the active layer allowing detection of chemical and biological agents; and

tuning electro-mechanical devices of the plurality of electro-mechanical devices with the focused ion beam.

2. The method of claim 1, wherein the step of tuning is performed by removing portions of the electro-mechanical device with the focused ion beam.

3. The method of claim 1, wherein the step of tuning is performed by removing portions of the active layer with the focused ion beam.

4. The method of claim 1, wherein each electro-mechanical device of the plurality of electro-mechanical devices has a resonant frequency greater than 1 MHz.

5. The method of claim 1, wherein the active layer is comprised of a member selected from the group consisting of amphiphiles, dimyristylphosphatidylchlorine, dimyristylphosphatidylserine, polymers, metal hydrides, antibodies, and oligonucleotides.

6. The method of claim 1, wherein the step of depositing an active layer is performed with a printhead.

7. The method of claim 1, wherein the electro-mechanical device is a resonator.

8. The method of claim 7, wherein the resonator is comprised of a member selected from the group consisting of silicon, aluminum-nitride, silicon-carbide, gallium-nitride, and quartz.

9. The method of claim 1, wherein the electro-mechanical device is a MEMS device.