×

Nonvolatile storage array with continuous control gate employing hot carrier injection programming

  • US 7,285,819 B2
  • Filed: 07/25/2005
  • Issued: 10/23/2007
  • Est. Priority Date: 07/25/2005
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of programming a storage cell in an array of storage cells, comprising:

  • providing the array of storage cells, including a storage cell, the array comprising;

    a semiconductor layer;

    a first trench and a second trench spaced-apart from one another, wherein;

    each of the first trench and the second trench extends from a surface of the semiconductor layer;

    a portion of the semiconductor layer lies between the first and second trenches; and

    the portion of the semiconductor layer has a first wall immediately adjacent to the first trench and a second wall immediately adjacent to the second trench;

    a first control gate extending into the first trench;

    a first source/drain region underlying the first trench;

    a second source/drain region that;

    lies within the portion of the semiconductor layer and adjacent to the surface of the semiconductor layer, wherein the second source/drain region is spaced apart from the first wall, the second wall, or both the first and second walls;

    orunderlies the second trench;

    a first set of discontinuous storage elements lying between the first control gate and the first wall of the portion of the semiconductor layer; and

    a second set of discontinuous storage elements lying between;

    the first control gate; and

    a part of the semiconductor layer at the surface of the portion of the semiconductor layer, wherein the part of the semiconductor layer lies outside the second source/drain region; and

    biasing the first source/drain region to a drain programming voltage (VPD);

    biasing the second source/drain region to 0 V; and

    biasing the first control gate to a gate programming voltage (VPG) to program a first bit of the storage cell by injecting charge into the first set of the discontinuous storage elements adjacent to the first wall of the portion of the semiconductor layer.

View all claims
  • 32 Assignments
Timeline View
Assignment View
    ×
    ×