Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
First Claim
1. A magnetic memory comprising:
- a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a magnetic element that is configured to be programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction, the first write current and the second write current programming the magnetic element via spin transfer;
at least one bit line corresponding to the plurality of magnetic storage cells; and
a plurality of source lines corresponding to the plurality of magnetic storage cells;
wherein the at least one bit line and the plurality of source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state;
wherein the second direction is opposite to the first direction and the second direction and the third direction are the same.
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Abstract
A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.
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Citations
40 Claims
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1. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a magnetic element that is configured to be programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction, the first write current and the second write current programming the magnetic element via spin transfer; at least one bit line corresponding to the plurality of magnetic storage cells; and a plurality of source lines corresponding to the plurality of magnetic storage cells; wherein the at least one bit line and the plurality of source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state; wherein the second direction is opposite to the first direction and the second direction and the third direction are the same. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a magnetic element and an selection device, the magnetic element being configured to be programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and being programmed to a low resistance state by a second write current driven through the magnetic element in a second direction opposite to the first direction, the first write current and the second write current programming the magnetic element via spin transfer; a plurality of bit lines, each of the plurality of bit lines corresponding to a first portion of the plurality of magnetic storage cells; a plurality of source lines, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic storage cells; and a plurality of word lines, each of the plurality of word lines corresponding to a magnetic storage cell of the plurality of magnetic storage cells and for allowing current to flow through the magnetic storage cell; wherein the plurality of bit lines and the plurality of source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in the second direction. - View Dependent Claims (21, 22, 23)
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24. A method for utilizing at least one magnetic memory cell in a memory, each of the at least one magnetic memory cell including a magnetic element capable of being programmed using spin transfer, the method comprising:
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programming the at least one memory cell to a high resistance state or a low resistance state including programming the high resistance state by driving a first write current through the magnetic element in a first direction or programming the low resistance state by driving a second write current driven through the magnetic element in a second direction, the first write current and the second write current programming the magnetic element via spin transfer; and reading the at least one magnetic memory cell by driving at least one read current through the magnetic element in a third direction that does not destabilize the low resistance states; wherein the second direction and the third direction are the same. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification