Non-volatile memory device and method of programming same
First Claim
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1. A method of programming a non-volatile memory device, the method comprising:
- applying a wordline voltage and a bitline voltage to a memory cell of the non-volatile memory device;
detecting whether the bitline voltage falls below a predetermined detection voltage during a first programming period associated with a first program loop; and
,determining programming conditions for a second programming period associated with a second program loop following the first programming loop based on the result of the bitline voltage detection.
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Abstract
Disclosed are a non-volatile memory device and a method of programming the same. The method comprises applying a wordline voltage, a bitline voltage, and a bulk voltage to a memory cell during a plurality of program loops. In cases where the bitline voltage falls below a first predetermined detection voltage during a current program loop, or the bulk voltage becomes higher than a second predetermined detection voltage, the same wordline voltage is used in the current programming loop and a next program loop following the current program loop. Otherwise, the wordline voltage is incremented by a predetermined amount before the next programming loop.
21 Citations
21 Claims
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1. A method of programming a non-volatile memory device, the method comprising:
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applying a wordline voltage and a bitline voltage to a memory cell of the non-volatile memory device; detecting whether the bitline voltage falls below a predetermined detection voltage during a first programming period associated with a first program loop; and
,determining programming conditions for a second programming period associated with a second program loop following the first programming loop based on the result of the bitline voltage detection. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A non-volatile memory device, comprising:
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a first voltage generating circuit generating a first voltage applied to a memory cell in the non-volatile memory device; a second voltage generating circuit generating a second voltage applied to the memory cell; and
,a control circuit generating a control signal having a logic state that varies in accordance with a determination of the second voltage level in relation to a predetermined detection voltage during a first programming period associated with a first program loop; wherein the control circuit controls the first voltage generating circuit to generate the first voltage at a first voltage level during a second programming period associated with a second program loop following the first program loop where the second voltage falls below the predetermined detection voltage during the first programming period. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of programming a non-volatile memory device, the method comprising:
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performing a first program loop comprising a programming period and a program verification period, wherein the programming period comprises applying a wordline voltage and a bitline voltage to a memory cell in the non-volatile memory device during the first program loop, and detecting whether the bitline voltage falls below a predetermined detection voltage; determining programming conditions for a second program loop following the first program loop in response to a program condition being satisfied during the first program loop, wherein the program condition is satisfied during the first program loop upon detection of the bitline voltage falling below the predetermined detection voltage. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification