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Method for forming an optoelectronic device having an isolation layer

  • US 7,288,421 B2
  • Filed: 07/06/2004
  • Issued: 10/30/2007
  • Est. Priority Date: 12/29/2000
  • Status: Expired due to Fees
First Claim
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1. A method for forming an optoelectronic device, comprising:

  • forming a substrate;

    forming a bottom mirror on the substrate, the bottom mirror being at least partially conductive;

    forming an active region above the bottom mirror;

    forming a top mirror above the active region, the top mirror being at least partially conductive;

    defining a gain guide aperture in the top mirror; and

    forming, above the top mirror, a substantially dielectric isolation layer, and a resonant reflector, the substantially dielectric isolation layer being interposed between the resonant reflector and the top mirror, and the substantially dielectric isolation layer being formed so as to substantially prevent energy in an evanescent tail of a guided mode associated with the resonant reflector from entering the top mirror.

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