Pulsed deposition layer gap fill with expansion material

• US 7,288,463 B1
• Filed: 04/28/2006
• Issued: 10/30/2007
• Est. Priority Date: 04/28/2006
• Status: Active Grant

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Papasouliotis, George D.
• Primary Examiner(s): Sarkar; Asok K.
• Assistant Examiner(s): Yevsikov; Victor V.
• Application Number:
  US11/414,459
• Time in Patent Office: 550 Days
• Field of Search: 438/758, 438/788, 438/431, 438/432
• US Class Current: 438/431
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

Conformal dielectric deposition processes supplemented with a deposited expansion material can fill high aspect ratio narrow width gaps with significantly reduced incidence of voids or weak spots. The technique can also be used generally to form composites, such as for the densification of any substrate having open spaces or gaps to be filled without the incidence of voids or seams.

Claims

1. A method of filling a gap on a semiconductor substrate, the method comprising:

a) providing in a deposition reaction chamber a semiconductor substrate having a gap on a surface;

b) conformally depositing a dielectric film on the substrate surface until the gap is partially filled, wherein the dielectric film is deposited until the remaining width of the gap is sufficiently narrow such that reactant diffusion limitations prevent conformal deposition;

c) depositing in the remaining gap a second material having the capacity to expand and form dielectric when treated following deposition; and

d) treating the second material following it deposition to cause it to expand and form dielectric;

whereby the gap is filled with dielectric.

2. The method of claim 1, wherein operation d) is an oxidation.

3. The method of claim 1, wherein the second material comprises silicon.

4. The method of claim 3, wherein operation d) is an oxidation.

5. The method of claim 4, wherein the second material is polysilicon.

6. The method of claim 1, wherein the second material comprises an organosilicon material.

7. The method of claim 1, wherein the dielectric film comprises silicon dioxide.

8. The method of claim 1, wherein the dielectric film is deposited until the gap width is less than 100 Å

.

9. The method of claim 1, wherein the dielectric film is deposited until the gap width is about 40 Å

.

10. The method of claim 9, wherein the second material comprises silicon.

11. The method of claim 10, wherein operation d) is an oxidation.

12. The method of claim 11, wherein the second material is polysilicon.

13. The method of claim 11, wherein the second material comprises an organosilicon material.

14. The method of claim 10, wherein the oxidation is conducted in steam for 1 hour at a temperature of at least 700°

C.

15. The method of claim 1, wherein b) comprises:

(i) exposing the substrate surface to a catalyst or catalyst-containing precursor gas to form a catalyst or a catalyst-containing precursor on the substrate surface; and

(ii) exposing the substrate surface to a silicon-containing precursor gas to form a silicon oxide-based dielectric film layer on the substrate.

16. The method of claim 15, wherein the catalyst or catalyst-containing precursor is a metal catalyst-containing precursor is selected from the list of metal catalyst-containing precursors comprising aluminum, zirconium, hafnium, gallium, titanium, niobium, and tantalum.

17. The method of claim 16, wherein the metal catalyst-containing precursor is at least one of hexakis(dimethylamino) aluminum and trimethyl aluminum.

18. The method of claim 15, wherein the catalyst or catalyst-containing precursor is a metal- and metalloid-free catalyst that can sufficiently adsorb onto or react with the substrate surface and prepare it to react with the subsequently added silicon-containing precursor to form a dielectric layer more than a monolayer thick.

19. The method of claim 18, wherein the catalyst is selected from the group consisting of organic acids, anhydrides of organic acids, dialkylphosphates, alkylphosphates, phosphonic acids, phosphinic acids, phosphorus oxides, alkylamines (primary, secondary or tertiary), arylamines, alky/arylboronic acids, sulphonic acids, water, ammonium salts, phosphonitrile compounds, boron triflates, inorganic acids, anhydrides of inorganic acids, and combinations thereof.

20. The method of claim 15, wherein the silicon-containing precursor is at least one of a silanol and a silanediol.

21. A method of forming a composite structure, the method comprising:

a) providing in a deposition reaction chamber a porous or fibrous substrate;

b) depositing on the substrate surface a second material having the capacity to expand and form dielectric when treated following deposition; and

c) treating the second material following its deposition to cause it to expand;

whereby the composite is formed.

22. The method of claim 21, wherein the second material is a metal or metalloid.

23. The method of claim 21, wherein operation c) is an oxidation.