Sacrificial inorganic polymer intermetal dielectric damascene wire and via liner
First Claim
1. A method of forming an interconnect structure comprising the steps of:
- providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric;
depositing a mechanically rigid dielectric atop said lower metal wiring layer;
forming at least one via through said mechanically rigid dielectric to a portion of said first metal lines; and
forming an upper metal wiring layer having second metal lines positioned within a upper low-k dielectric, said second metal lines being electrically connected to said first metal lines through said via, wherein said via comprises a metal having a coefficient of thermal expansion that substantially matches said mechanically rigid dielectric, wherein said lower low-k dielectric and said upper low-k dielectric comprises the same or different dielectric material comprising a b-staged polymer having about 95% carbon or a SiCOH carbon doped oxide.
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Accused Products
Abstract
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.
22 Citations
6 Claims
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1. A method of forming an interconnect structure comprising the steps of:
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providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing a mechanically rigid dielectric atop said lower metal wiring layer; forming at least one via through said mechanically rigid dielectric to a portion of said first metal lines; and forming an upper metal wiring layer having second metal lines positioned within a upper low-k dielectric, said second metal lines being electrically connected to said first metal lines through said via, wherein said via comprises a metal having a coefficient of thermal expansion that substantially matches said mechanically rigid dielectric, wherein said lower low-k dielectric and said upper low-k dielectric comprises the same or different dielectric material comprising a b-staged polymer having about 95% carbon or a SiCOH carbon doped oxide. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification