Silicon nitride etching methods
First Claim
1. A method of etching a substrate having a silicon nitride material thereon, the method comprising:
- providing a plasma including methyl fluoride (CH3F) and a non-carbon containing fluorine source including sulfur hexafluoride (SF6); and
exposing the substrate to the plasma to etch the silicon nitride material selective to at least one of an underlying silicon dioxide and an underlying silicide.
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Accused Products
Abstract
Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g. <100 V.
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Citations
18 Claims
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1. A method of etching a substrate having a silicon nitride material thereon, the method comprising:
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providing a plasma including methyl fluoride (CH3F) and a non-carbon containing fluorine source including sulfur hexafluoride (SF6); and exposing the substrate to the plasma to etch the silicon nitride material selective to at least one of an underlying silicon dioxide and an underlying silicide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of etching a substrate having a silicon nitride material thereon, the method comprising:
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providing a plasma including hydrogen (H2) and octafluorocyclobutane (C4F8); and exposing the substrate to the plasma to etch the silicon nitride material selective to at least one of an underlying silicon dioxide and an underlying silicide. - View Dependent Claims (9, 10, 11, 12)
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13. A method of etching a substrate having a silicon nitride material thereon, the method comprising:
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providing a plasma including oxygen (O2), a non-carbon containing fluorine source including sulfur-hexafluorine (SF6) and methyl fluoride (CH3F); and exposing the substrate to the plasma to etch the silicon nitride material selective to at least one of an underlying silicon dioxide and an underlying silicide. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification