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Silicon nitride etching methods

  • US 7,288,482 B2
  • Filed: 05/04/2005
  • Issued: 10/30/2007
  • Est. Priority Date: 05/04/2005
  • Status: Active Grant
First Claim
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1. A method of etching a substrate having a silicon nitride material thereon, the method comprising:

  • providing a plasma including methyl fluoride (CH3F) and a non-carbon containing fluorine source including sulfur hexafluoride (SF6); and

    exposing the substrate to the plasma to etch the silicon nitride material selective to at least one of an underlying silicon dioxide and an underlying silicide.

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