Plasma immersion ion implantation process
First Claim
Patent Images
1. A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, comprising:
- prior to placing the workpiece in the plasma reactor chamber, depositing a seasoning film on the interior surfaces of the plasma reactor chamber by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber;
placing the workpiece on a workpiece support in the chamber; and
performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma;
removing the workpiece from the chamber; and
removing the seasoning film from the chamber interior surfaces, wherein one of;
(a) said implant species precursor gas comprises a fluoride of a dopant species, said seasoning film precursor gas comprises a fluorocarbon gas and said seasoning film comprises a fluorocarbon polymer, or(b) said implant species precursor gas comprises a hydride of a dopant species, said seasoning film precursor gas comprises a hydrocarbon gas and said seasoning film comprises a hydrocarbon polymer.
1 Assignment
0 Petitions
Accused Products
Abstract
One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.
201 Citations
22 Claims
-
1. A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, comprising:
-
prior to placing the workpiece in the plasma reactor chamber, depositing a seasoning film on the interior surfaces of the plasma reactor chamber by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber; placing the workpiece on a workpiece support in the chamber; and performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma; removing the workpiece from the chamber; and removing the seasoning film from the chamber interior surfaces, wherein one of; (a) said implant species precursor gas comprises a fluoride of a dopant species, said seasoning film precursor gas comprises a fluorocarbon gas and said seasoning film comprises a fluorocarbon polymer, or (b) said implant species precursor gas comprises a hydride of a dopant species, said seasoning film precursor gas comprises a hydrocarbon gas and said seasoning film comprises a hydrocarbon polymer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, comprising:
-
prior to placing the workpiece in the plasma reactor chamber, depositing a seasoning film on the interior surfaces of the plasma reactor chamber by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber; placing the workpiece on a workpiece support in the chamber; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma; removing the workpiece from the chamber; removing the seasoning film from the chamber interior surfaces; and wherein said implant precursor species comprises a fluorine-containing gas, said seasoning film precursor gas comprises a fluorocarbon gas and said seasoning film comprises a fluorocarbon polymer.
-
-
8. A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, comprising:
-
prior to placing the workpiece in the plasma reactor chamber, depositing a seasoning film on the interior surfaces of the plasma reactor chamber by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber; placing the workpiece on a workpiece support in the chamber; and performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma; removing the workpiece from the chamber; and removing the seasoning film from the chamber interior surfaces; wherein said implant species precursor gas comprises a fluoride or hydride of a dopant, and wherein the step of performing plasma immersion ion implantation further comprises; minimizing deposition on said workpiece of material derived from the implant species precursor gas. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, comprising:
-
prior to placing the workpiece in the plasma reactor chamber, depositing a seasoning film on the interior surfaces of the plasma reactor chamber by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber; placing the workpiece on a workpiece support in the chamber; and performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma; removing the workpiece from the chamber; and removing the seasoning film from the chamber interior surfaces; wherein said implant species precursor gas comprises a fluoride or hydride of a dopant, and wherein the step of performing plasma immersion ion implantation further comprises; minimizing etching of said workpiece of material derived from the implant species precursor gas. - View Dependent Claims (15)
-
-
16. A method of processing a workpiece in a plasma reactor chamber, comprising:
-
prior to placing the workpiece in the plasma reactor chamber, depositing an elastic cushioning film on the wafer-support surface of a wafer support within the chamber by introducing an elastic material precursor gas into the chamber and generating a plasma within the chamber; placing the workpiece on the elastic cushioning film a workpiece support in the chamber; and introducing a workpiece processing gas into the chamber and processing the workpiece in the chamber; removing the workpiece from the chamber; and removing the elastic cushioning film from the wafer support. - View Dependent Claims (17, 18, 19, 20, 21, 22)
-
Specification