Wafer-level optoelectronic device substrate

• US 7,288,758 B2
• Filed: 09/09/2005
• Issued: 10/30/2007
• Est. Priority Date: 11/25/1998
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Inventors: Heiks, Noel A., Sherrer, David W.
• Primary Examiner(s): LE, QUE TAN
• Application Number:
  US11/223,403
• Publication Number:
  US 20060006321A1
• Time in Patent Office: 781 Days
• Field of Search: 250/239, 250/214.1, 250/216
• US Class Current: 250/239
• CPC Class Codes: G02B 6/4201 Packages, e.g. shape, construction, internal or external details
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4231 with intermediate elements, e.g. rods and balls, between the elements
• CPC Class Codes: G02B 6/4232 using the surface tension of fluid solder to align the elements, e.g. solder bump techniques flip-chip mounting techniques in assembly of semiconductor devices H01L24/81
• CPC Class Codes: G02B 6/4246 Bidirectionally operating package structures
• CPC Class Codes: G02B 6/4249 comprising arrays of active devices and fibres
• CPC Class Codes: G02B 6/4257 having a supporting carrier or a mounting substrate or a mounting plate G02B6/3648 takes precedence
• CPC Class Codes: G02B 6/4274 Electrical aspects G02B6/4263 and G02B6/4265 take precedence
• CPC Class Codes: G02B 6/4292 the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements

Abstract

Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.

Claims

1. A wafer-level optoelectronic device substrate, comprising:

a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises an optoelectronic device flip-chip mounted thereon.

2. The wafer-level optoelectronic device substrate of claim 1, wherein the substrate is a silicon wafer.

3. The wafer-level optoelectronic device substrate of claim 1, further comprising an encapsulant over each of the optoelectronic devices.

4. The wafer-level optoelectronic device substrate of claim 1, wherein the optoelectronic device is a light emitting diode.

5. The wafer-level optoelectronic device substrate of claim 1, further comprising a driver in each of the substrate portions.

6. The wafer-level optoelectronic device substrate of claim 1, wherein each of the substrate portions comprises a plurality of optoelectronic devices mounted thereon.

7. A wafer-level optoelectronic device substrate, comprising:

a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises;

an optoelectronic device mounted on the substrate; and

an electrical conductor extending from a front surface of the substrate to a back surface of the substrate in electrical communication with the optoelectronic device for passing signals to the optoelectronic device.

8. The wafer-level optoelectronic device substrate of claim 7, wherein the substrate is a silicon wafer.

9. The wafer-level optoelectronic device substrate of claim 7, further comprising an encapsulant over each of the optoelectronic devices.

10. The wafer-level optoelectronic device substrate of claim 7, wherein the optoelectronic device is a light emitting diode.

11. The wafer-level optoelectronic device substrate of claim 7, further comprising a driver in each substrate portion.

12. The wafer-level optoelectronic device substrate of claim 7, wherein each of the substrate portions comprises a plurality of optoelectronic devices mounted thereon.

13. A wafer-level optoelectronic device substrate, comprising:

a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises;

a trench in a surface thereof; and

an optoelectronic device mounted on the substrate in the trench; and

an encapsulant over the optoelectronic device forming a surface thereover, wherein the optoelectronic device substrate has an optical path which passes through the encapsulant surface.

14. The wafer-level optoelectronic device substrate of claim 13, wherein the substrate is a silicon wafer.

15. The wafer-level optoelectronic device substrate of claim 13, wherein the optoelectronic device is a light emitting diode.

16. A wafer-level optoelectronic device substrate, comprising:

a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises an optoelectronic device mounted thereon and an encapsulant over the optoelectronic device, wherein the encapsulant forms a surface over the optoelectronic device and the optoelectronic device substrate has an optical path which passes through the encapsulant surface.

17. The wafer-level optoelectronic device substrate of claim 16, wherein the substrate is a silicon wafer.

18. The wafer-level optoelectronic device substrate of claim 16, further comprising a driver in each substrate portion.

19. The wafer-level optoelectronic device substrate of claim 16, wherein the optoelectronic device is a light emitting diode.