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Semiconductor device having thin film transistor and light-shielding film

  • US 7,288,789 B2
  • Filed: 05/28/2003
  • Issued: 10/30/2007
  • Est. Priority Date: 02/12/1999
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

    a source electrode and a drain electrode electrically connected to the semiconductor layer;

    a pixel electrode electrically connected to one of the source electrode and the drain electrode;

    an interlayer-insulating film covering the thin film transistor, the source electrode and the drain electrode;

    a light-shielding film formed on the interlayer-insulating film; and

    a common feeder line electrically connected to the light-shielding film through an electrically conducting film,wherein any portion of the light-shielding film is not overlapped with the common feeder line.

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