Semiconductor device having thin film transistor and light-shielding film

• US 7,288,789 B2
• Filed: 05/28/2003
• Issued: 10/30/2007
• Est. Priority Date: 02/12/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Ohnuma, Hideto, Koyama, Jun, Yamazaki, Shunpei, Kitakado, Hidehito, Tanaka, Yukio, Fujimoto, Etsuko
• Primary Examiner(s): Wilczewski; Mary
• Assistant Examiner(s): Duong; Khanh
• Application Number:
  US10/446,187
• Publication Number:
  US 20030201439A1
• Time in Patent Office: 1,616 Days
• Field of Search: 257/59, 257/72, 257/347, 257/350, 257/351, 257/357
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants

Abstract

A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

Claims

1. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer;

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the thin film transistor, the source electrode and the drain electrode;

a light-shielding film formed on the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein any portion of the light-shielding film is not overlapped with the common feeder line.

2. A semiconductor device according to claim 1, further comprising an insulating film between the light-shielding film and the electrically conducting film.

3. A semiconductor device according to claim 1, wherein the pixel electrode formed over the light-shielding film.

4. A semiconductor device according to claim 1, wherein the light-shielding film comprises aluminum.

5. A semiconductor device according to claim 1, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

6. A semiconductor device according to claim 1, wherein the semiconductor device is an EL display device.

7. A semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

8. A semiconductor device according to claim 1, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

9. A semiconductor device according to claim 1, wherein the electrically conducting film is transparent.

10. A semiconductor device according to claim 1, wherein the electrically conducting film is connected to the light-shielding film through an insulating film.

11. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer;

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the thin film transistor, the source electrode and the drain electrode;

a light-shielding film formed on the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein the common feeder line is not connected to the pixel electrode, and

wherein any portion of the light-shielding film is not overlapped with the common feeder line.

12. A semiconductor device according to claim 11, further comprising an insulating film between the light-shielding film and the electrically conducting film.

13. A semiconductor device according to claim 11, wherein the pixel electrode formed over the light-shielding film.

14. A semiconductor device according to claim 11, wherein the light-shielding film comprises aluminum.

15. A semiconductor device according to claim 11, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

16. A semiconductor device according to claim 11, wherein the semiconductor device is an EL display device.

17. A semiconductor device according to claim 11, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

18. A semiconductor device according to claim 11, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

19. A semiconductor device according to claim 11, wherein the electrically conducting film is transparent.

20. A semiconductor device according to claim 11, wherein the electrically conducting film is connected to the light-shielding film trough an insulating film.

21. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer;

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the thin film transistor;

a light-shielding film formed over the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein any portion of the light-shielding film is not overlapped with the common feeder line.

22. A semiconductor device according to claim 21, further comprising an insulating film between the light-shielding film and the electrically conducting film.

23. A semiconductor device according to claim 21, wherein the pixel electrode formed over the light-shielding film.

24. A semiconductor device according to claim 21, wherein the light-shielding film comprises aluminum.

25. A semiconductor device according to claim 21, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

26. A semiconductor device according to claim 21, wherein the semiconductor device is an EL display device.

27. A semiconductor device according to claim 21, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

28. A semiconductor device according to claim 21, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

29. A semiconductor device according to claim 21, wherein the electrically conducting film is transparent.

30. A semiconductor device according to claim 21, wherein the electrically conducting film is connected to the light-shielding film through an insulating film.

31. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer;

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the thin film transistor, the source electrode and the drain electrode;

a light-shielding film formed on the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein the electrically conducting film is wider than the common feeder line in a lateral direction, and

wherein the light-shielding film and the common feeder line are not overlapped with each other.

32. A semiconductor device according to claim 31, further comprising an insulating film between the light-shielding film and the electrically conducting film.

33. A semiconductor device according to claim 31, wherein the pixel electrode formed over the light-shielding film.

34. A semiconductor device according to claim 31, wherein the light-shielding film comprises aluminum.

35. A semiconductor device according to claim 31, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

36. A semiconductor device according to claim 31, wherein the semiconductor device is an EL display device.

37. A semiconductor device according to claim 31, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

38. A semiconductor device according to claim 31, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

39. A semiconductor device according to claim 31, wherein the electrically conducting film is transparent.

40. A semiconductor device according to claim 31, wherein the electrically conducting film is connected to the light-shielding film through an insulating film.

41. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer;

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the tin film transistor, the source electrode and the drain electrode;

a light-shielding film formed on the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein the electrically conducting film is wider than the common feeder line in a lateral direction,

wherein the common feeder line is not connected to the pixel electrode, and

wherein the light-shielding film and the common feeder line are not overlapped with each other.

42. A semiconductor device according to claim 41, further comprising an insulating film between the light-shielding film and the electrically conducting film.

43. A semiconductor device according to claim 41, wherein the pixel electrode formed over the light-shielding film.

44. A semiconductor device according to claim 41, wherein the light-shielding film comprises aluminum.

45. A semiconductor device according to claim 41, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

46. A semiconductor device according to claim 41, wherein the semiconductor device is an EL display device.

47. A semiconductor device according to claim 41, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

48. A semiconductor device according to claim 41, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

49. A semiconductor device according to claim 41, wherein the electrically conducting film is transparent.

50. A semiconductor device according to claim 41, wherein the electrically conducting film is connected to the light-shielding film through an insulating film.

51. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;

a source electrode and a drain electrode electrically connected to the semiconductor layer,

a pixel electrode electrically connected to one of the source electrode and the drain electrode;

an interlayer-insulating film covering the thin film transistor;

a light-shielding film formed over the interlayer-insulating film; and

a common feeder line electrically connected to the light-shielding film through an electrically conducting film,

wherein the electrically conducting film is wider than the common feeder line in a lateral direction, and

wherein the light-shielding film and the common feeder line are not overlapped with each other.

52. A semiconductor device according to claim 51, further comprising an insulating film between the light-shielding film and the electrically conducting film.

53. A semiconductor device according to claim 51, wherein the pixel electrode formed over the light-shielding film.

54. A semiconductor device according to claim 51, wherein the light-shielding film comprises aluminum.

55. A semiconductor device according to claim 51, wherein the interlayer-insulating film comprises at least one selected from the group consisting of a polyimide film, an acrylic film, a polyamide film, a BCB (benzocyclobutene) film, and a MSSQ (methyl silsesquioxane) film.

56. A semiconductor device according to claim 51, wherein the semiconductor device is an EL display device.

57. A semiconductor device according to claim 51, wherein the semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, an electronic play machine, a picture reproducing apparatus, and a digital camera.

58. A semiconductor device according to claim 51, further comprising a capacitor in a portion where the light-shielding film and the electrically conducting film are overlapped.

59. A semiconductor device according to claim 51, wherein the electrically conducting film is transparent.

60. A semiconductor device according to claim 51, wherein the electrically conducting film is connected to the light-shielding film through an insulating film.