Display device and manufacturing method of the same

• US 7,288,886 B2
• Filed: 11/03/2006
• Issued: 10/30/2007
• Est. Priority Date: 11/07/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Jung, Jae-hoon, Kim, Nam-deog
• Primary Examiner(s): Bruce; David
• Assistant Examiner(s): Blease; Conrad R
• Application Number:
  US11/556,545
• Publication Number:
  US 20070103062A1
• Time in Patent Office: 361 Days
• Field of Search: 313/504
• US Class Current: 313/504
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/878 comprising reflective means

Abstract

A display device includes; a thin film transistor formed on a insulating substrate, a pixel electrode electrically connected to the thin film transistor, an organic layer formed on the pixel electrode, a wall surrounding the organic layer, a reflective film formed on the wall, and a common electrode formed on the organic layer.

Claims

1. A display device comprising:

a thin film transistor formed on an insulating substrate;

a pixel electrode electrically connected to the thin film transistor;

an organic layer formed on the pixel electrode;

a wall surrounding the organic layer;

a reflective film formed on the wall; and

a common electrode formed on the organic layer.

2. The display device according to claim 1, wherein the reflective film comprises any one selected from a group consisting of Mo, Cr, Ag, and Al.

3. The display device according to claim 1, wherein the thickness of the reflective film is about 50 nm to about 500 nm.

4. The display device according to claim 1, wherein reflectivity of the reflective film is greater than about 70%.

5. The display device according to claim 1, wherein an angle between a side surface of the wall and the insulating substrate is about 40 degrees to about 50 degrees with respect to each other.

6. The display device according to claim 1, wherein at least part of the wall is made of a photosensitive organic material.

7. The display device according to claim 1, wherein the reflective film and the pixel electrode are spaced apart from each other.

8. The display device according to claim 1, wherein the reflective film and the organic layer are spaced apart from each other.

9. The display device according to claim 1, wherein the wall and the pixel electrode are spaced apart from each other.

10. The display device according to claim 1, wherein the wall and the organic layer are spaced apart from each other, and the organic layer comprises a low molecular weight material and is formed by an evaporation method.

11. The display device according to claim 1, wherein the wall and the organic layer are in contact with each other, the organic layer comprises polymer material and is formed by an ink jet method.

12. The display device according to claim 1, wherein the wall covers a part of the pixel electrode, and the reflective film is spaced from the pixel electrode.

13. The display device according to claim 1, wherein light transmittance of the common electrode is greater than 50%.

14. A method of manufacturing a display device, comprising:

forming a thin film transistor on an insulating substrate;

forming a pixel electrode electrically connected to the thin film transistor;

forming a wall surrounding the pixel electrode;

forming a reflective film on the wall;

forming an organic layer on the pixel electrode; and

forming a common electrode on the organic layer.

15. The manufacturing method according to claim 14, wherein the wall is formed with a side surface thereof and the insulating substrate making an angle of about 40 degrees to about 50 degrees with respect to each other.

16. The manufacturing method according to claim 14, wherein the wall is formed to be spaced apart from the pixel electrode.

17. The manufacturing method according to claim 14, wherein the forming of the wall comprises coating a positive photosensitive material on the organic layer, and exposing and developing the positive photosensitive material.

18. The manufacturing method according to claim 14, wherein the forming of the wall comprises coating a negative photosensitive material on the organic layer, and exposing and developing the negative photosensitive material.

19. The manufacturing method according to claim 14, wherein the forming of the wall comprises:

coating a photosensitive material on the organic layer;

exposing the photosensitive material using a mask having a slit pattern formed to correspond to a side surface of the wall; and

developing the exposed photosensitive material.

20. The manufacturing method according to claim 14, wherein the forming of the wall comprises:

coating a photosensitive material on the organic layer; and

pressing an imprint mask formed with an intaglio pattern corresponding to the wall against the photosensitive material.

21. The manufacturing method according to claim 14, wherein the forming of the organic layer comprises:

arranging a shadow mask having an opening wider than a region surrounded by the wall where the opening corresponds to the pixel electrode; and

supplying organic material vapor through the opening.