High-frequency module and communication apparatus

• US 7,289,008 B2
• Filed: 10/07/2004
• Issued: 10/30/2007
• Est. Priority Date: 10/08/2003
• Status: Expired due to Fees

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Mori, Hiroyuki, Miyawaki, Yoshihiro, Kitazawa, Kenji, Kuroki, Hiroshi
• Primary Examiner(s): Summons; Barbara
• Application Number:
  US10/962,170
• Publication Number:
  US 20050104685A1
• Time in Patent Office: 1,118 Days
• Field of Search: 333/193, 333/133, 310/313.R
• US Class Current: 333/133
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H03H 9/725 : Duplexers
• CPC Class Codes: H04B 1/0057 : using diplexing or multiplexing filters for selecting the desired band
• CPC Class Codes: H04B 1/52 : Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
• CPC Class Codes: H05K 1/0237 : High frequency adaptations H05K1/0216 takes precedence
• CPC Class Codes: H05K 1/0298 : Multilayer circuits
• CPC Class Codes: H05K 1/16 : incorporating printed electric components, e.g. printed resistor, capacitor, inductor

Abstract

A high-frequency module has a structure wherein transmitting filters, receiving filters and high-frequency power amplifiers are mounted on a multilayered substrate and wherein matching circuits are inserted between input terminals of the receiving filters and output terminals of the transmitting filters. Transmission lines as components of the matching circuits, and the like are formed internally of the multilayered substrate. Thus, the whole body of the high-frequency module can be downsized.

Claims

1. A high-frequency module comprising:

a transmitting filter and a receiving filter connected with an antenna terminal directly or via a multiplexer circuit;

a matching circuit inserted in an input side of the receiving filter; and

a high-frequency power amplifier circuit connected with the transmitting filter for amplifying a transmission signal in a predetermined transmission pass band, the filters, the matching circuit and the high-frequency power amplifier circuit provided on a multilayered substrate,

wherein the transmitting filter and the receiving filter is a surface acoustic wave (hereinafter, referred to as “

SAW”

) filter,

wherein the transmitting SAW filter and the receiving SAW filter constitute a single bare chip formed on a single piezoelectric substrate,

wherein a main surface of the bare chip is formed with IDT electrodes, input/output electrodes of the IDT electrodes, and a ground electrode surrounding the IDT electrodes,

wherein the ground electrode and the input/output electrodes are bonded with electrodes formed on the surface of the multilayered substrate in a face-to-face relation,

wherein a sealed space is formed at a SAW propagation portion of the IDT electrodes.

2. A high-frequency module according to claim 1, wherein the matching circuit is inserted between an input terminal of the receiving filter and an output terminal of the transmitting filter.

3. A high-frequency module according to claim 1, wherein a passive device constituting a part of the matching circuit is formed at a dielectric layer within the multilayered substrate.

4. A high-frequency module according to claim 3, wherein the matching circuit includes a transmission line formed at the dielectric layer within the multilayered substrate.

5. A high-frequency module according to claim 4, wherein the matching circuit further includes a chip component of an inductor device and/or a capacitor device, the chip component disposed on a surface of the multilayered substrate.

6. A high-frequency module according to claim 4, wherein the matching circuit further includes an inductor device and/or a capacitor device formed at the dielectric layer within the multilayered substrate.

7. A high-frequency module according to claim 1, wherein the multilayered substrate is a multilayered ceramic substrate including ceramic dielectric layers.

8. A communication apparatus, such as a portable terminal, which incorporates therein the high-frequency module according to claim 1.

9. A high-frequency module according to claim 1, wherein the ground electrode and the input/output electrodes of the bare chip are bonded with the electrodes on the surface of the multilayered substrate by means of solder.

10. A high-frequency module according to claim 1, wherein the multilayered substrate is formed with a cavity, in which the bare chip is mounted.

11. A high-frequency module according to claim 1, wherein the bare chip is provided on a back side of the multilayered substrate.

12. A high-frequency module according to claim 1, wherein a frequency characteristic of each of the SAW filters is set to a higher level than a required design value according to an estimated temperature increase of each of the SAW filters associated with heat generated from a transmission power amplifier device constituting a part of the high-frequency power amplifier circuit.

13. A high-frequency module according to claim 12, wherein the frequency characteristic of the SAW filter is a pass band characteristic of the SAW filter, and the higher end of the pass band is set to a higher level than the required design value.

14. A high-frequency module according to claim 12, wherein the frequency characteristic of the SAW filter is a stop band characteristic of the SAW filter, and the higher end of the stop band is set to a higher level than the required design value.

15. A high-frequency module according to claim 12, wherein the temperature increase of the SAW filter associated with the generated heat is estimated according to a distance from the transmission power amplifier device.

16. A high-frequency module according to claim 12, wherein the temperature increase of each SAW filter associated with the generated heat is estimated according to each distance from the transmission power amplifier device.

17. A high-frequency module according to claim 1, wherein the components mounted on the multilayered substrate are hermetically sealed with a mold resin.

18. A high-frequency module according to claim 17, wherein the mold resin is a thermosetting resin having properties which include:

an elastic modulus of 4 to 8 GPa at room temperatures, an elastic modulus of 0.2 to 0.5 GPa at 220°

C., and a glass transition point of 100 to 150°

C.

19. A high-frequency module according to claim 18, wherein a linear expansion coefficient of the thermosetting resin at temperatures lower than the glass transition point is in the range of 25 to 80×

10<sup>−

6</sup>/°

C.

20. A high-frequency module according to claim 1, wherein the multilayered substrate has a linear expansion coefficient of 8 to 18×

10<sup>−

6</sup>/°

C. at 25 to 400°

C.

21. A high-frequency module according to claim 1, wherein a passive device constituting a part of the multiplexer circuit is formed at a dielectric layer within the multilayered substrate.

22. A high-frequency module comprising:

a transmitting filter and a receiving filter connected with an antenna terminal directly or via a demultiplexer circuit;

a matching circuit inserted in an input side of the receiving filter; and

a high-frequency power amplifier circuit connected with the transmitting filter for amplifying a transmission signal in a predetermined transmission pass band, the filters, the matching circuit and the high-frequency power amplifier circuit mounted on a multilayered substrate,

wherein the transmitting filter and the receiving filter is a surface acoustic wave (hereinafter, referred to as “

SAW”

) filter,

wherein the transmitting SAW filter and the receiving SAW filter constitute a single bare chip formed on a single piezoelectric substrate,

wherein a main surface of the bare chip is formed with IDT electrodes, input/output electrodes of the IDT electrodes, and a ground electrode surrounding the IDT electrodes,

wherein the ground electrode and the input/output electrodes are bonded with electrodes formed on the surface of a substrate different from the multilayered substrate, in a face-to-face relation, thereby forming a SAW package,

wherein a sealed space is formed at a SAW propagation portion of the IDT electrodes, and

wherein the SAW package is mounted on the multilayered substrate.

23. A high-frequency module comprising:

a transmitting filter and a receiving filter (hereinafter, referred to as “

SAW”

filter) connected with an antenna terminal directly or via a multiplexer circuit;

a matching circuit inserted in an input side of the receiving filter; and

a high-frequency power amplifier circuit connected with the transmitting filter for amplifying a transmission signal in a predetermined transmission pass band, the filters, the matching circuit and the high-frequency power amplifier circuit provided on a multilayered substrate,

wherein the SAW filter comprises a bare chip,

wherein a main surface of the bare chip is formed with IDT electrodes, input/output electrodes of the IDT electrodes, and a ground electrode surrounding the IDT electrodes,

wherein the ground electrode and the input/output electrodes are bonded with electrodes formed on the surface of the multilayered substrate in a face-to-face relation,

wherein a sealed space is formed at a SAW propagation portion of the IDT electrodes,

wherein the components provided on the multilayered substrate are sealed with a mold resin, and

wherein the mold resin is a thermosetting resin having properties which include;

an elastic modulus of 4 to 8 GPa at room temperatures, an elastic modulus of 0.2 to 0.5 GPa at 220°

C., and a glass transition point of 100 to 150°

C.

24. A high-frequency module according to claim 23, wherein the multilayered substrate has a linear expansion coefficient of 8 to 18×

10<sup>−

6</sup>/°

C. at 25 to 400°

C.

25. A high-frequency module according to claim 23, wherein the linear expansion coefficient of the thermosetting resin at temperatures lower than the glass transition point is in the range of 25 to 80×

10<sup>−

6</sup>/°

C.

26. A communication apparatus, such as a portable terminal, which incorporates therein the high-frequency module according to claim 23.

27. A high-frequency module comprising a transmission power amplifier device and a SAW filter provided on a dielectric substrate,

wherein a frequency characteristic of the SAW filter is set to a higher level than a required design value according to an estimated temperature increase of the SAW filter associated with heat generated from the transmission power amplifier device.

28. A high-frequency module according to claim 27, wherein the frequency characteristic of the SAW filter is a pass band characteristic of the SAW filter and the higher end of the pass band is set to a higher level than the required design value.

29. A high-frequency module according to claim 27, wherein the frequency characteristic of the SAW filter is a stop band characteristic of the SAW filter and the higher end of the stop band is set to a higher level than the required design value.

30. A high-frequency module according to claim 27, wherein the temperature increase of the SAW filter associated with the generated heat is estimated according to a distance from the transmission power amplifier device.

31. A high-frequency module according to claim 27, wherein plural SAW filters are provided on the dielectric substrate, and the temperature increase of each SAW filter associated with the generated heat is estimated according to each distance from the transmission power amplifier device.

32. A communication apparatus, such as a portable terminal, which incorporates therein the high-frequency module according to claim 27.