Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
First Claim
1. A magnetic memory comprising:
- a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements, the plurality of magnetic elements including at least a first magnetic element and a second magnetic element;
a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors;
a plurality of bit lines;
a plurality of bit line selection transistors coupled with the plurality of bit lines, for selectively enabling a portion of the plurality of bit lines; and
a plurality of data lines for each of the plurality of magnetic storage cells, a first data line of the plurality of data lines coupled with the second end of the first magnetic element and a second data line of the plurality of data lines coupled with the second end of the second magnetic element, the plurality of data lines for providing a write current during writing and a sense current during reading of the plurality of magnetic storage cells.
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Accused Products
Abstract
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
198 Citations
49 Claims
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1. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements, the plurality of magnetic elements including at least a first magnetic element and a second magnetic element; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; a plurality of bit lines; a plurality of bit line selection transistors coupled with the plurality of bit lines, for selectively enabling a portion of the plurality of bit lines; and a plurality of data lines for each of the plurality of magnetic storage cells, a first data line of the plurality of data lines coupled with the second end of the first magnetic element and a second data line of the plurality of data lines coupled with the second end of the second magnetic element, the plurality of data lines for providing a write current during writing and a sense current during reading of the plurality of magnetic storage cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; and a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; a plurality of bit lines; wherein the plurality of magnetic elements include a first magnetic element and a second magnetic element and wherein the at least one selection transistor includes a single selection transistor; and wherein the first magnetic element includes a first storage layer having a first magnetization and the second magnetic element includes a second storage layer having a second storage layer, the first magnetization aligned substantially antiparallel with the second magnetization.
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11. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and a plurality of bit lines wherein a first magnetic element of the plurality of magnetic elements is disposed substantially directly above a second magnetic element of the plurality of magnetic elements; and wherein each of the first magnetic element and the second magnetic element includes a tunneling magnetoresistive junction. - View Dependent Claims (12, 13, 14)
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15. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and a plurality of bit lines wherein a first magnetic element of the plurality of magnetic elements is disposed substantially directly above a second magnetic element of the plurality of magnetic elements; and wherein the first magnetoresistive storage element and the second magnetoresistive storage element each include a separate cell plate and are separated by an insulating layer.
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16. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and a plurality of bit lines wherein a first magnetic element of the plurality of magnetic elements is disposed substantially directly above a second magnetic element of the plurality of magnetic elements; and wherein the first magnetoresistive storage element and the second magnetoresistive storage element each share a cell plate.
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17. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and a plurality of bit lines; at least one of wherein the plurality of magnetic elements include a plurality of dual tunneling magnetoresistive junctions, wherein each of the plurality of magnetic elements includes a first pinned layer, a tunneling barrier layer, a free layer, a nonmagnetic spacer layer, and a second pinned layer, the tunneling barrier layer residing between the free layer and the first pinned layer, the nonmagnetic spacer layer residing between the second pinned layer and the free layer, wherein each of the plurality of magnetic elements include a plurality of tunneling magnetoresistive junctions, each of the plurality of tunneling magnetoresistive junctions being separated by a nonmagnetic layer, wherein each of the plurality of magnetic elements include at least one tunneling magnetoresistive junction and at least one spin valve, each of the at least one tunneling magnetoresistive junction and the at least one spin valve being separated by a nonmagnetic spacer layer, wherein each of the plurality of magnetic elements includes a free layer, the free layer including an amorphous forming element having a concentration of not more than thirty atomic percent and at least one of Co, Fe, and Ni, wherein each of the plurality of magnetic elements includes a free layer, the free layer including an amorphous forming element and at least one of Co, Fe, and Ni, the amorphous forming element including boron, wherein each of the plurality of magnetic elements includes a free layer, the free layer including an amorphous forming element and at least one of Co, Fe, and Ni, the free layer having a saturation magnetization of between four hundred and one thousand five hundred emu/cm3, wherein each of the plurality of magnetic elements includes a free layer, the free layer including at least one of Co, Fe, and Ni and being a multilayer including a plurality of layers, wherein each of the plurality of magnetic elements includes a free layer and a pinned layer, each of the pinned layer and the free layer including at least one of Co, Fe, and Ni and the pinned layer is a multilayer including a plurality of layers, and wherein each of the plurality of magnetic elements includes a free layer, a pinned layer and at least one nonmagnetic spacer layer including at least one nano-oxide layer, each of the free layer and the pinned layer including at least one of Co, Fe, and Ni. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and a plurality of bit lines; wherein each of the plurality of magnetic elements includes a free layer, the free layer including at least one of Co, Fe, and Ni; wherein each of the plurality of magnetic elements includes a pinned layer including at least one of Co, Fe, and Ni; and wherein each of the plurality of magnetic elements includes at least one tunneling barrier layer. - View Dependent Claims (31, 32, 33, 34)
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35. A method for providing a magnetic memory comprising:
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providing a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements, the magnetic storage cell providing further including providing a first magnetic element and a second magnetic element and wherein the at least one selection transistor includes a single selection transistor; providing a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; providing a plurality of bit lines; providing a plurality of bit line selection transistors coupled with the plurality of bit lines, for selectively enabling a portion of the plurality of bit lines; and providing a plurality of data lines for each of the plurality of magnetic storage cells, a first data line of the plurality of data lines coupled with the second end of the first magnetic element and a second data line of the plurality of data lines coupled with the second end of the second magnetic element, the plurality of data lines for providing a write current during writing and a sense current during reading of the plurality of magnetic storage cells. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43)
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44. A method for providing a magnetic memory comprising:
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providing a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements, the magnetic storage cell providing further including providing a first magnetic element and a second magnetic element and wherein the at least one selection transistor includes a single selection transistor; providing a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and providing a plurality of bit lines; wherein providing the plurality of magnetic storage cells further includes; providing the first magnetic element including a first storage layer having a first magnetization; and providing the second magnetic element including a second storage layer having a second storage layer, the first magnetization aligned substantially antiparallel with the second magnetization.
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45. A method for providing a magnetic memory comprising:
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providing a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements, wherein providing the plurality of magnetic storage cells further includes providing a first magnetic element of the plurality of magnetic elements is disposed substantially directly above a second magnetic element of the plurality of magnetic elements; providing a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and providing a plurality of bit lines; at least one of wherein each of the first magnetic element and the second magnetic element includes a tunneling magnetoresistive junctions;
wherein the first magnetoresistive storage element and the second magnetoresistive storage element each include a separate cell plate and are separated by an insulating layer. - View Dependent Claims (46, 47, 48)
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49. A method for providing a magnetic memory comprising:
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providing a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of magnetic elements capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element, each of the plurality of magnetic elements having a first end and a second end, and at least one selection transistor coupled to the first end of each of the plurality of magnetic elements; providing a plurality of word lines coupled with the plurality of selection transistors and for selectively enabling a portion of the plurality of selection transistors; and providing a plurality of bit lines; wherein the plurality of magnetic elements includes at least one of providing a plurality of dual tunneling magnetoresistive junctions;
providing a first pinned layer, a tunneling barrier layer, a free layer, a nonmagnetic spacer layer, and a second pinned layer for each of the plurality of magnetic elements, the tunneling barrier layer residing between the free layer and the first pinned layer, the nonmagnetic spacer layer residing between the second pinned layer and the free layer;
providing a plurality of tunneling magnetoresistive junctions for each or the plurality of magnetic storage cells, each of the plurality of tunneling magnetoresistive junctions being separated by a nonmagnetic layer; and
providing at least one tunneling magnetoresistive junction and at least one spin valve, each of the at least one tunneling magnetoresistive junction and the at least one spin valve being separated by a nonmagnetic spacer layer.
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Specification