Composite MEMS pressure sensor configuration

• US 7,290,453 B2
• Filed: 12/12/2005
• Issued: 11/06/2007
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: Amnon Brosh
• Original Assignee: Amnon Brosh
• Inventors: Brosh, Amnon
• Primary Examiner(s): ALLEN, ANDRE J
• Application Number:
  US11/299,611
• Publication Number:
  US 20060144153A1
• Time in Patent Office: 694 Days
• Field of Search: 737/20, 737/21, 737/26, 737/27, 737/54, 438/53, 438/48
• US Class Current: 73/720
• CPC Class Codes: G01L 9/0052 of piezoresistive elements circuits therefor G01L9/06

Abstract

A pressure sensor assembly comprised of a single and dual layer diaphragm with integrated force sensing flexure, such as a cantilever beam. Strain gages are positioned on the force sensing beam. The pressure forces the diaphragm to deflect. The deflection is constrained by the beam, which is compelled to bend. The bending induces strains in strain gages located on the beam. The strain gages are connected in a Wheatstone bridge configuration. When a voltage is applied to the bridge, the strain gages provide an electrical output signal proportional to the pressure. Composite diaphragm—beam pressure sensors convert pressure more efficiently and improve sensor performance.

Claims

1. A dual die pressure sensor, comprising:

(a) a first die of a semiconductor material etched in the form of a diaphragm with a center boss;

(b) a second die of a semiconductor material etched in the form of a structure comprising a center boss supported by at least two beams; and

(c) at least one strain gauge placed on each beam;

(d) wherein said first and second dies are joined causing the boss of the first die to be linked to the boss of the second die.

2. The pressure sensor of claim 1, wherein each of the beams comprises an end section with a clamped edge, and wherein the end sections of said beams at the clamped edges of said beams are narrowed down.

3. The pressure sensor of claim 1, wherein the second die comprises a stress isolation slot at least partially circumscribing the beams.

4. A dual die pressure sensor, comprising:

(a) a first die of a semiconductor material etched in the form of a flat diaphragm with a center protrusion formed by thinning regions of the surface of the diaphragm;

(b) a second die of a semiconductor material etched in the form of a structure comprising a center boss supported by at least two beams;

(c) at least one strain gauge placed on each beam;

(d) wherein said first and second dies are joined causing the center protrusion of the first die to be linked to the boss of the second die.

5. The pressure sensor of claim 4, wherein each of the beams comprises an end section and a clamped edge, and wherein the end sections of said beams at the clamped edges of said beams are narrowed down.

6. The pressure sensor of claim 4, wherein the second die comprises a stress isolation slot at least partially circumscribing the beams.

7. A method for manufacturing a pressure sensor, comprising the steps of:

(a) etching a die of a semiconductor material in the form of a flat diaphragm of first thickness;

(b) forming a beam with the predetermined first thickness by thinning down regions of the diaphragm exterior surface to a smaller second predetermined thickness; and

(c) placing a plurality of strain gauges on said beam.

8. The pressure sensor of claim 7, wherein the beam is formed along the center line of the diaphragm, runs the length of the diaphragm, and is clamped at each end edge to the die, and wherein at least one of the strain gauges is placed near at least one of the clamped edges of the beam and at least one of the strain gauges is placed at about the center of the beam.

9. The pressure sensor of claim 7, wherein said beam is formed such that it is only clamped at one end edge to the die and wherein at least one of the strain gauges is placed in a longitudinal orientation and at least one of the strain gauges is placed in a transverse orientation, each near the clamped edge of said beam.

10. The pressure sensor of claim 7, wherein said beam is formed in the shape of a cross and is clamped at each of four end edges to said die, and wherein at least one of the strain gauges is placed in a longitudinal orientation and at least one of the strain gauges is placed in a transverse orientation near each clamped edge of said beam.

11. The pressure sensor of claim 10, wherein end sections of said beams at the clamped edges are narrowed down.

12. A pressure sensor, comprising:

(a) a first die of a semiconductor material comprising a flat diaphragm having a center protrusion, formed by thinning down regions of the exterior surface of said diaphragm;

(b) a Pyrex glass base bonded to said first die;

(c) a second die of a semiconductor material etched in the form of a beam array having a plurality of beams; and

(d) at least one strain gauge placed on each beam;

(e) wherein said second die overlaps said first die and is bonded to said Pyrex glass base.

13. The pressure sensor of claim 12, wherein said beam array of the second die comprises cantilever beams.

14. The pressure sensor of claim 12, wherein said beam array of the second die comprises clamped beams.

15. The pressure sensor of claim 12, wherein the second die links with said center protrusion of the first die by applying a pre-stress.

16. The pressure sensor of claim 12, wherein a predetermined gap is created between the second die and the center protrusion of the first die.

17. The pressure sensor of claim 12, wherein the Pyrex glass base comprises a vent hole for measuring gauge and differential pressures.

18. The pressure sensor of claim 12, wherein the Pyrex glass base has no vent hole, and wherein a vacuum is sealed inside the first die for measuring absolute pressures.