Method for electrochemically forming structures including non-parallel mating of contact masks and substrates

• US 7,291,254 B2
• Filed: 11/26/2003
• Issued: 11/06/2007
• Est. Priority Date: 11/26/2002
• Status: Expired due to Term

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Smalley, Dennis R., Cohen, Adam L.
• Primary Examiner(s): CULBERT, ROBERTS P
• Application Number:
  US10/724,515
• Publication Number:
  US 20040182716A1
• Time in Patent Office: 1,441 Days
• Field of Search: 216/2, 216/43, 216/41, 118/721, 118/406, 156/345.19, 156/345.3, 156/285, 156/87, 205/666, 205/667, 205/206, 205/135, 205/118
• US Class Current: 205/135
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B81C 1/00126 Static structures not provided for in groups B81C1/00031 - B81C1/00119
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers

Abstract

Treatment of substrates, formation of structures, and formation of multilayer structures using contact masks are disclosed where a non-parallel or non-simultaneous mating of various mask contact surfaces to a substrate surface occurs. Some embodiments involve bringing a relative planar mask contact surface and a relative planar substrate surface together at a small angle (but larger than an alignment tolerance associated with the system). Some embodiments involve flexing a mask to make it non-planar and bringing it into contact with a substrate such that progressively more contact between the mask and substrate occur until complete mating is achieved. Some embodiments involve use of gas or liquid pressure to bow a flexible or semi-flexible mask and use a linear actuator to bring the mating surfaces together and to bring the mask into a more planar configuration.

Claims

1. A process for forming a multilayer three-dimensional structure, comprising:

(a) forming and adhering a layer of material to a substrate, wherein the substrate may include one or more previously formed layers;

(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;

wherein the formation of each of at least a plurality of the adhered layers, comprises;

(1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of;

(a) selectively electrodepositing a first material onto the substrate such that at least one void remains, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the substrate together in a non-parallel manner in the presence of an electrolyte so that an initial contact between the mating surface of the substrate and the mating surface of the contact mask occurs in a controlled manner at only selected locations, and wherein continued relative movement between the mask and the substrate bring substantially all relevant mating surfaces of the mask into contact with the substrate and so that mating leaves paths for excess electrolyte to escape from between the mask and the substrate;

(ii) electrodepositing the first material onto the substrate with the contact mask in place;

(iii) separating the contact mask and the substrate to expose the at least one void;

or

(b) electrodepositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the first material together in a non-parallel manner in the presence of an electrolyte so that initial contact between the mating surface of the first material and the mating surface of the contact mask occurs in a controlled manner at only selected locations, and where after continued relative movement of the mask and the substrate bring substantially all of the mating surface of the mask into contact with the first material and so that mating leaves paths for excess electrolyte to escape from between the mask and the first material;

(ii) etching into the first material with the contact mask in place to form at least one void; and

(iii) separating the contact mask and the first material.

2. The process of claim 1 wherein a separation between mated and unmated portions of the mask substantially defines a straight line.

3. The process of claim 1 wherein a separation between mated and unmated portions of the mask, prior to bringing substantially all of the mating surface of the mask into contact with the first material, substantially defines a closed loop.

4. The process of claim 3 wherein the closed loop is substantially a circle.

5. The process of claim 1 wherein, at initial contact, some portions of the mating surface of the mask and corresponding mating locations on the substrate are separated by a distance greater than that dictated by an alignment tolerance between the mask and the substrate.

6. The process of claim 1 wherein the mask, prior to mating with the substrate is forced to have a curvature that is greater than a tolerance in setting curvature.

7. The process of claim 6 wherein the force comprises excess gas or liquid pressure on one side of the mask.

8. The process of claim 1 wherein, at initial contact, the mating surface of the mask is substantially planar, though potentially discontinuous, wherein the mating surface of the substrate or the mating surface of the first material is substantially planar, and wherein a normal to the plane of the mating surface of the mask is not parallel to a normal to the plane of the mating surface of the substrate or to the mating surface of the first material by an amount greater than that which is derived from an alignment tolerance.

9. The process of claim 1 wherein the formation of each of at least the plurality of adhered layers additionally comprises at least one planarization operation.

10. The process of claim 1 wherein the formation of each of at least the plurality of adhered layers comprises deposition of at least a second material.

11. The process of claim 1 wherein a shape of the mating surface of the substrate or of the first material remains substantially constant during a course of mating and a shape of the mating surface of the mask changes during the course of mating such that upon completion of mating, the shapes of the mating surface of the mask, and of the mating surface of the substrate or the mating surface of the first material are substantially the same in at least those areas intended for mating.

12. The process of claim 1 wherein a shape of the mating surface of the mask remains substantially constant during a course of mating and a shape of the mating surface of the substrate changes during the course of mating such that upon completion of mating, the shapes of the mating surface of the mask, and of the mating surface of the substrate are substantially the same in at least those areas intended for mating.

13. The process of claim 1 wherein a shape of the mating surface of the mask and a shape of the mating surface of the substrate changes significantly during the course of mating such that upon completion of mating, the shapes of the mating surface of the mask, and of the mating surface of the substrate are substantially the same in at least those areas intended for mating.

21. The process of claim 1 wherein at initial contact between the mating surface of the substrate the mating surface of the mask has a first curvature and the mating surface of the substrate has a second curvature, wherein the first curvature has a nominal radius that is less than that of the second curvature, and wherein after initial contact a separation of the mask and the substrate is further reduced so that additional mating occurs and such that one or both of the first and second curvatures change so that that first and second curvatures become more alike.

22. The process of claim 1 wherein at initial contact between the mating surface of the substrate and the mating surface of the contact mask, the mating surface of the mask is more convex relative to the mating surface of the substrate, and wherein after further relative movement between the mask and the substrate mating is completed.

14. A process for forming a multilayer three-dimensional structure, comprising:

(a) forming and adhering a layer of material to a substrate, wherein the substrate may include one or more previously formed layers;

(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;

wherein the formation of each of at least a plurality of layers, comprises;

(1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of;

(a) selectively electrodepositing a first material onto the substrate such that at least one void remains, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the substrate together in a non-parallel manner in the presence of an electrolyte so that on initial contact the mating surface of the mask has a first curvature and a mating surface of the substrate has a second curvature, wherein the first curvature has a nominal radius that is less than that of the second curvature, and wherein after initial contact a separation of other portions of the mask and the substrate is further reduced so that additional mating occurs and such that one or both of the first and second curvatures change so that that first and second curvatures become more alike and so that mating leaves paths for excess electrolyte to escape from between the mask and the substrate;

(ii) electrodepositing the first material onto the substrate with the contact mask in place;

(iii) separating the contact mask and the substrate to expose the at least one void;

or

(b) electrodepositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the first material together in a non-parallel manner in the presence of an electrolyte so that on initial contact the mating surface of the mask has a first curvature and a mating surface of the first material has a second curvature, wherein the first curvature has a nominal radius that is less than that of the second curvature, and wherein after initial contact a separation of other surfaces of the mask and the substrate is further reduced so that additional mating occurs and such that one or both of the first and second curvatures change so that that first and second curvatures become more alike and so that mating leaves paths for excess electrolyte to escape from between the mask and the first material;

(ii) etching into the first material with the contact mask in place to form at least one void; and

(iii) separating the contact mask and the first material.

15. The process of claim 14 wherein the second curvature retains a relatively constant value during mating and the first curvature changes to become more like the second curvature.

16. The process of claim 14 wherein the first curvature retains a relatively constant value during mating and the second curvature changes to become more like the first curvature.

23. The process of claim 14 wherein at initial contact between the mating surface of the substrate and the mating surface of the contact mask, the mating surface of the mask is more convex relative to the mating surface of the substrate, and wherein after further relative movement between the mask and the substrate mating is completed.

17. A process for forming a multilayer three-dimensional structure, comprising:

(a) forming and adhering a layer of material to a substrate, wherein the substrate may include one or more previously formed layers;

(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;

wherein the formation of each of at least a plurality of layers, comprises;

(1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of;

(a) selectively electrodepositing a first material onto the substrate such that at least one void remains, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the substrate together in a non-parallel manner in the presence of an electrolyte so that on initial contact, the mating surface of the mask is more convex relative to the mating surface of the substrate, and wherein after further relative movement between the mask and the substrate mating is completed and so that mating leaves paths for excess electrolyte to escape from between the mask and the substrate;

(ii) electrodepositing the first material onto the substrate with the contact mask in place;

(iii) separating the contact mask and the substrate to expose the at least one void;

or

(b) electrodepositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, comprising;

(i) bringing a mating surface of a contact mask and a mating surface of the first material together in a non-parallel manner in the presence of an electrolyte so that on initial contact the mating surface of the mask is more convex relative to the mating surface of the substrate, and wherein after further relative movement between the mask and the substrate mating is completed and so that mating leaves paths for excess electrolyte to escape from between the mask and the substrate;

(ii) etching into the first material with the contact mask in place to form at least one void; and

(iii) separating the contact mask and the first material.

18. The process of claim 17 wherein at initial contact the mating surface of the mask is convex while the mating surface of the substrate is (1) concave toward the mask with a larger radius of curvature, (2) planar, or (3) convex away from the mask.

19. The process of claim 17 wherein at initial contact the mating surface of the mask is planar while the mating surface of the substrate is convex away from the mask.

20. The process of claim 17 wherein at initial contact the mating surface of the mask is concave while the mating surface of the substrate is convex away from the mask with a smaller radius of curvature.