Multi-layer film stack for extinction of substrate reflections during patterning

• US 7,291,552 B2
• Filed: 12/13/2005
• Issued: 11/06/2007
• Est. Priority Date: 12/27/2000
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: King, Sean W., Natarajan, Sanjay S., Elamrawi, Khaled A.
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/300,023
• Publication Number:
  US 20060094251A1
• Time in Patent Office: 693 Days
• Field of Search: 438/636
• US Class Current: 438/636
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/902 Capping layer
• CPC Class Codes: Y10S 438/945 Special, e.g. metal
• CPC Class Codes: Y10S 438/95 Multilayer mask including nonradiation sensitive layer
• CPC Class Codes: Y10S 438/952 Utilizing antireflective layer
• CPC Class Codes: Y10S 438/958 Passivation layer

Abstract

A method including introducing a dielectric layer over a substrate between an interconnection line and the substrate, the dielectric layer comprising a plurality of alternating material layers; and patterning an interconnection to the substrate. An apparatus comprising a substrate comprising a plurality of devices formed thereon; and an interlayer dielectric layer comprising a base layer and a cap layer, the cap layer comprising a plurality of alternating material layers overlying the substrate.

Claims

1. A method comprising:

introducing an etch stop layer over a substrate;

introducing a dielectric layer over the etch stop layer between an interconnection line and a contact point on the substrate, the dielectric layer comprising a plurality of at least three alternating material layers, each alternating layer comprising a first material layer and a different second material layer; and

patterning an interconnection to the substrate, wherein

the plurality of at least three alternating material layers comprising the dielectric layer collectively having a property that suppresses substrate reflections during patterning.

2. The method of claim 1, wherein the interconnection line comprises a first level interconnection line.

3. The method of claim 1, wherein the dielectric layer comprises a first dielectric layer, the method further comprising introducing a second dielectric layer between the first dielectric layer and the substrate.

4. The method of claim 1, wherein the dielectric layer has a thickness on the order of about 2000 angstroms.

5. The method of claim 1, wherein each second material layer has a thickness that is five or six times thicker than a thickness of each first material layer.

6. The method of claim 1, wherein each first material layer has a thickness of approximately 50 angstroms, and each second material layer has a thickness of approximately 283 angstroms.

7. The method of claim 1, wherein the plurality of alternating material layers comprises at least three alternating material layers, each alternating layer comprising a first material layer and a different second material layer.

8. The method of claim 2, wherein introducing a plurality of alternating material layers comprises introducing silicon dioxide as an ultimate material layer.

9. The method of claim 8, wherein introducing a plurality of alternating material layers comprises alternating silicon dioxide layers with at least one other material layers.

10. The method of claim 9, wherein the number of alternating silicon dioxide layers comprises at least six alternating material layers, each alternating layer comprising a first material layer and a different second material layer.

11. The method of claim 6, wherein each first material layer is a layer of silicon oxynitride and each second material layer is a layer of silicon dioxide.

12. The method of claim 7, wherein each second material layer has a thickness five or six times a thickness of each first material layer.

13. The method of claim 12, wherein each first material layer has a thickness of approximately 50 angstroms and each second material layer has a thickness of approximately 283 angstroms.

14. The method of claim 13, wherein each first material layer is a layer of silicon oxynitride and each second material layer is a layer of silicon dioxide.

15. A method comprising:

introducing an etch stop layer over a substrate;

introducing a dielectric layer over the etch stop layer between an interconnection line and a contact point on the substrate, the dielectric layer comprising a plurality of alternating material layers; and

wherein the plurality alternating material layers comprising the dielectric layer collectively having a property that suppresses substrate reflections during patterning, and the dielectric layer has a thickness on the order of about 2000 angstroms.

16. A method comprising:

introducing an etch stop layer over a substrate;

introducing a dielectric layer over the etch stop layer between an interconnection line and a contact point on the substrate, the dielectric layer comprising a plurality of at least six alternating material layers, each alternating layer comprising a first material layer and a different second material layer; and

patterning an interconnection to the substrate, wherein the plurality of at least six alternating material layers comprising the dielectric layer collectively having a property that suppresses substrate reflections during patterning.

17. The method of claim 16, wherein the dielectric layer has a thickness on the order of about 2000 angstroms.

18. The method of claim 16, wherein each second material layer has a thickness five or six times a thickness of each first material layer.

19. The method of claim 18, wherein each first material layer has a thickness of approximately 50 angstroms and each second material layer has a thickness of approximately 283 angstroms.

20. The method of claim 19, wherein each first material layer is a layer of silicon oxynitride and each second material layers is a layer of silicon dioxide.