Protection circuit for electrostatic discharge

• US 7,291,887 B2
• Filed: 06/19/2002
• Issued: 11/06/2007
• Est. Priority Date: 06/19/2002
• Status: Expired due to Fees

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Chen, Wei-Fan, Chiu, Fu-Chien
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US10/173,676
• Publication Number:
  US 20030234425A1
• Time in Patent Office: 1,966 Days
• Field of Search: 257/341, 257/342, 257355-363, 257/371, 438/133, 438/223, 438/224, 438/227, 438/228, 438/300
• US Class Current: 257/355
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

A protection circuit protects an integrated circuit (“IC”) from peak voltages and includes a voltage divider coupled to a silicon controlled rectifier. The voltage divider allows for adjustment of the trigger voltage, trigger current, and holding voltage of the protection circuit so that the protection circuit can conduct current after a particular voltage level has been applied to the protection circuit without accidental triggering on by, for example, noise.

Claims

1. A protection circuit comprising:

a semiconductor substrate;

an n-type semiconductor region in the semiconductor substrate;

a first p+ region in the n-type semiconductor region;

a first n+ region only in the n-type semiconductor region;

a p-type semiconductor region in the semiconductor substrate and contacting the n-type semiconductor region;

a second p+ region in the p-type semiconductor region;

a second n+ region in the p-type semiconductor region; and

a voltage divider having a first portion coupled to a second portion at a node;

wherein

the node is further coupled to the first n+ region;

the first portion is coupled between the first p+ region and the node; and

the second portion is coupled between the node and both the second n+ region and the second p+ region.

2. The protection circuit of claim 1 having a first terminal for coupling to the first p+ region and the first portion, and having a second terminal for coupling to the second p+ region, the second n+ region, and the second portion.

3. The protection circuit of claim 2 wherein the first terminal is an anode and the second terminal is a cathode.

4. The protection circuit of claim 1 wherein the n-type semiconductor region is an n-well.

5. The protection circuit of claim 1 wherein the p-type semiconductor region is a p-well.

6. The protection circuit of claim 1, wherein the first n+ region is closer than the first p+ region to the second n+ region.

7. The protection circuit of claim 1 further comprising a third n+ region in the n-type semiconductor region, coupled to the first portion.

8. The protection circuit of claim 7 wherein the third n+ region is farther than at least one of the first n+ region and the first p+ region from the second n+ region.

9. The protection circuit of claim 1, wherein each of the first portion and the second portion of the voltage divider comprises a resistor.

10. The protection circuit of claim 1, wherein each of the first portion and the second portion of the voltage divider comprises a capacitor.

11. The voltage divider of claim 1 wherein the first portion of the voltage divider comprises a first resistor and the second portion comprises at least a second resistor and the capacitor.

12. The voltage divider of claim 1 wherein the first portion of the voltage divider comprises a first diode and the second portion of comprises a second diode and a capacitor.

13. The protection circuit of claim 1, wherein the voltage divider comprises a CMOS inverter and a capacitor.

14. The voltage divider of claim 13 wherein the CMOS inverter comprises a PMOS transistor and an NMOS transistor coupled in series at the node, the first portion of the voltage divider including the PMOS transistor and the second portion including the NMOS transistor and the capacitor coupled in series.

15. A protection circuit comprising:

a silicon controlled rectifier including;

an anode;

a cathode;

a first transistor having a first emitter, a first base, and a first collector; and

a second transistor having a second emitter, a second base, and a second collector; and

a voltage divider including a first portion and a second portion coupled at a node, wherein

the first portion is coupled to the anode and the first emitter, the second portion is coupled to the cathode and the second emitter, and the node is coupled directly to the first base; and

the first portion comprises one of a resistor or a diode, and the second portion comprises at least one of a resistor, a diode, or a capacitor.

16. A protection circuit comprising:

a voltage divider having a first portion and a second portion coupled at a node, wherein

the first portion comprises one of a resistor or a diode, and the second portion comprises at least one of a resistor, a diode, or a capacitor;

a first transistor, the first portion coupled to a base and an emitter of the first transistor;

a second transistor, the second portion coupled across a collector and an emitter of the second transistor;

an anode terminal coupled to the first portion and the emitter of the first transistor; and

a cathode coupled to the second portion and an emitter of the second transistor;

a collector and the base of the first transistor being respectively coupled to a base and the collector of the second transistor.

17. A protection circuit comprising:

a voltage divider including a first portion and a second portion coupled at a node, wherein

the first portion comprises one of a resistor or a diode, and the second portion comprises at least one of a resistor, a diode, or a capacitor;

a pnp transistor including a pnp collector, a pnp base, and a pnp emitter;

the pnp emitter being coupled to the first portion; and

pnp base being coupled directly to the node;

an anode coupled to the pnp transistor and the first portion;

a cathode; and

an npn transistor including an npn collector, an npn base, and an npn emitter;

the npn emitter being coupled to the second portion and the cathode.

18. The protection circuit of claim 17 wherein the pnp base and the npn collector are coextensive.

19. The protection circuit of claim 17 wherein the pnp collector and the npn base are coextensive.

20. The protection circuit of claim 17, wherein there is resistance between the pnp emitter and the pnp base.

21. The protection circuit of claim 17, wherein there is resistance between the npn emitter and the npn base.

22. The protection circuit of claim 17, wherein there is resistance between the pnp base and the node.