Power semiconductor component

• US 7,291,899 B2
• Filed: 09/15/2004
• Issued: 11/06/2007
• Est. Priority Date: 09/15/2003
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Mauder, Anton, Falck, Elmar
• Primary Examiner(s): Lee; Eugene
• Application Number:
  US10/941,421
• Publication Number:
  US 20050116287A1
• Time in Patent Office: 1,147 Days
• Field of Search: 257/621, 257/171, 257328-330, 257/E29.257
• US Class Current: 257/621
• CPC Class Codes: H01L 29/0661 specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region adjoining the first conduction type region at the third surface. A trench extending from the first surface into the semiconductor body, the trench defined by a trench bottom and an arcuately shaped sidewall.

Claims

1. A semiconductor component comprising:

a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region, wherein the first surface is defined by the top surface of the second conduction type region, the second surface is defined by the bottom surface of the first conduction type region, and the third surface is defined as a junction between the bottom surface of the second conduction type region and the top surface of the first conduction type region;

a trench extending into the semiconductor body from the first surface through the third surface and into the first conduction type region, the trench defined by a trench bottom and a mostly arcuately shaped sidewall extending downward from the third surface to the trench bottom, wherein the trench bottom lies at least 20% further away from the first surface of the semiconductor body than the third surface lies away from the first surface of the semiconductor body.

2. The semiconductor component of claim 1, where the first conduction type region is n conduction type, and the second conduction type region is p conduction type.

3. The semiconductor component of claim 1, comprising:

a second trench extending from the trench bottom into the first conduction type region, having a second trench sidewall.

4. The semiconductor component of claim 3, comprising:

an insulation layer applied to the arcuately shaped sidewall and the second trench sidewall.

5. The semiconductor component of claim 4, wherein the insulation layer at least partially extends over the first surface.

6. The semiconductor component of claim 5, comprising an electrically conductive layer in contact with the second conduction type region.

7. The semiconductor component of claim 6, wherein the electrically conductive layer partially extends over the insulation layer, including the arcuately shaped sidewall.

8. The semiconductor component of claim 7, comprising:

a second electrically conductive layer applied to the second surface of the semiconductor body, in contact with the first conduction type region.

9. The semiconductor component of claim 1, comprising:

an insulation material, where the trench and the second trench are filled with the insulation material and the insulation material at least partially extends over the electrically conductive layer.

10. The semiconductor component of claim 9, wherein the insulation material is a polyimide.

11. The semiconductor component of claim 9, the second trench having a second trench bottom, wherein the electrically conductive layer is deposited on the second trench bottom.

12. The semiconductor component of claim 1, wherein the semiconductor component functions as a diode.

13. The semiconductor component of claim 1, wherein the semiconductor component is a transistor.

14. A semiconductor component comprising:

a semiconductor body of a first conduction type and having a first surface and a second surface, the first surface being defined by the top surface of the semiconductor body and the second surface being defined by the bottom surface of the semiconductor body;

a second conduction type region provided on the first surface of the semiconductor body, the second conduction type region having a lower surface forming a junction with the first surface of the semiconductor body and an upper surface opposite the lower surface;

a first trench extending through the second conduction type region into the semiconductor body, the first trench being defined by a first trench bottom and a primarily arcuately shaped sidewall extending downward from the first surface to the first trench bottom, wherein the bottom of the first trench lies at least 20% further away from the upper surface of the second conduction type region than the first surface of the semiconductor body lies away from the upper surface of the second conduction type region;

a second trench extending from the first trench bottom into the first conduction type region and having a second trench sidewall;

an insulation layer applied to the arcuately shaped sidewall and the second trench sidewall, wherein the insulation layer at least partially extends over a surface of the second conduction type region; and

an electrically conductive layer in contact with the second conduction type region, wherein the electrically conductive layer partially extends over the insulation layer, including the arcuately shaped sidewall.

15. The semiconductor component of claim 14, wherein the first conduction type region is n conduction type, and the second conduction type region is p conduction type.

16. The semiconductor component of claim 14, comprising:

a second electrically conductive layer applied to the second surface of the semiconductor body.

17. The semiconductor component of claim 16, comprising:

an insulation material, wherein the first trench and the second trench are filled with the insulation material and the insulation material at least partially extends over the electrically conductive layer.

18. The semiconductor component of claim 17, wherein the insulation material is a polyimide.

19. The semiconductor component of claim 17, wherein the second trench has a second trench bottom and the electrically conductive layer is deposited on the second trench bottom.

20. The semiconductor component of claim 14, wherein the semiconductor component functions as a diode.

21. The semiconductor component of claim 14, wherein the semiconductor component functions as a transistor.