Light emitting device and method of fabricating the same
First Claim
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1. A method of fabricating a light emitting device comprising:
- forming an interlayer insulating film, which comprises an organic material, over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode;
forming an inorganic insulating film on the interlayer insulating film by sputtering at a temperature of 150°
C. to 250°
C., the inorganic insulating film comprising silicon at a content at least 25.0 atomic % and at most 35.0 atomic % and nitrogen at a content at least 35.0 atomic % and at most 65.0 atomic %; and
forming a light emitting element, which has a light emitting layer between a pair of electrodes, over the inorganic insulating film.
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Abstract
It is characteristic of an organic material suited to an interlayer insulating film to transmit vapor therethrough and to be liable to absorb moisture, and the material has a disadvantage that it is extremely susceptible to oxygen and moisture to be readily deteriorated no matter whether it is low-molecular or high-molecular. Further, alkali metal or alkaline earth metal is used for a positive electrode or a negative electrode of a light emitting element, and these are liable to be oxidized by oxygen. Thus moisture is responsible for deterioration of a light emitting element and for failure such as dark spots or the like. A light emitting device is provided to comprise an interlayer insulating film comprising a high molecular chemical compound and formed on a TFT formed on an insulating surface, a light emitting element, which is provided on the interlayer insulating film, and in which a light emitting layer comprising an organic chemical compound is formed between a pair of electrodes, and an inorganic insulating film containing silicon and nitrogen as its main components or a carbon film possessing a SP3 coupling and containing hydrogen formed between the interlayer insulating film and the light emitting element.
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Citations
26 Claims
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1. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film, which comprises an organic material, over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode; forming an inorganic insulating film on the interlayer insulating film by sputtering at a temperature of 150°
C. to 250°
C., the inorganic insulating film comprising silicon at a content at least 25.0 atomic % and at most 35.0 atomic % and nitrogen at a content at least 35.0 atomic % and at most 65.0 atomic %; andforming a light emitting element, which has a light emitting layer between a pair of electrodes, over the inorganic insulating film. - View Dependent Claims (2, 3, 4)
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5. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film, which comprises an organic material, over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode; forming an inorganic insulating film on the interlayer insulating film by sputtering at a temperature of 150°
C. to 250°
C., the inorganic insulating film comprising silicon at a content at least 25.0 atomic % and at most 35.0 atomic % and nitrogen at a content of at least 35.0 atomic % and at most 65.0 atomic %;forming an electrode over the inorganic insulating film; and forming a light emitting layer comprising an organic material over the electrode. - View Dependent Claims (6, 7, 8)
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9. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film comprising an organic material over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a nate electrode; forming an inorganic insulating film comprising silicon and nitrogen over the interlayer insulating film by sputtering at a temperature of 150°
C. to 250°
C., wherein a composition ratio of nitrogen is higher than a composition ratio of oxygen in the film; andforming a light emitting element comprising a light emitting layer between a pair of electrodes, over the inorganic insulating film. - View Dependent Claims (10, 11, 12)
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13. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film comprising an organic material over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode; forming an inorganic insulating film comprising silicon and nitrogen over the interlayer insulating film by sputtering at a temperature of 150°
C. to 250°
C., wherein a composition ratio of nitrogen is higher than a composition ratio of oxygen in the film;forming an electrode over the inorganic insulating film; and forming a light emitting layer comprising an organic material over the electrode. - View Dependent Claims (14, 15, 16)
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17. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film comprising an organic material over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode; forming an inorganic insulating film comprising silicon and nitrogen over the interlayer insulating film by sputtering using a sputtering gas including N2, H2, and N20; and forming a light emitting element comprising a light emitting layer between a pair of electrodes, over the inorganic insulating film. - View Dependent Claims (18, 19, 20, 21)
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22. A method of fabricating a light emitting device comprising:
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forming an interlayer insulating film comprising an organic material over a thin film transistor, wherein the thin film transistor includes a semiconductor film, a gate insulating film, and a gate electrode; forming an inorganic insulating film comprising silicon and nitrogen over the interlayer insulating film by sputtering using a sputtering gas including N2 and Ar; and forming a light emitting element comprising a light emitting layer between a pair of electrodes, over the inorganic insulating film. - View Dependent Claims (23, 24, 25, 26)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTakayama, Toru, Yamazaki, Shunpei, Yamagata, Hirokazu, Koura, Akihiko
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Primary Examiner(s)Pham; Long
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Application NumberUS10/172,749Publication NumberTime in Patent Office1,975 DaysField of Search438/22, 438/23, 438/46, 438/149US Class Current438/23CPC Class CodesH10K 59/124 Insulating layers formed be...
