Photonic crystal light emitting device
First Claim
1. A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region;
a photonic crystal structure formed in an n-type region; and
a reflector;
wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region; and
wherein the reflector and the photonic crystal structure are disposed on opposite sides of the active region.
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Abstract
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
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Citations
13 Claims
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1. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; a photonic crystal structure formed in an n-type region; and a reflector; wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region; and wherein the reflector and the photonic crystal structure are disposed on opposite sides of the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification