Nanotube-on-gate FET structures and applications
First Claim
1. A non-volatile transistor device, comprisinga source region and a drain region of a first semiconductor type of material;
- a channel region of a second semiconductor type of material disposed between the source and drain region;
a gate structure made of at least one of semiconductive or conductive material and disposed over an insulator over the channel region;
a control structure including an electromechanically-deflectable nanotube switching element in spaced relation to the gate structure and capable of a deflected state and an undeflected state,wherein the device has a network of inherent capacitances, including an inherent capacitance between the gate structure and the nanotube switching element when the nanotube switching element is in the undeflected state, such that electrical stimulus at the control structure and at least one of the source and drain regions deflects the nanotube switching element into the deflected state and thus into contact with the gate structure.
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Accused Products
Abstract
Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.
249 Citations
22 Claims
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1. A non-volatile transistor device, comprising
a source region and a drain region of a first semiconductor type of material; -
a channel region of a second semiconductor type of material disposed between the source and drain region; a gate structure made of at least one of semiconductive or conductive material and disposed over an insulator over the channel region; a control structure including an electromechanically-deflectable nanotube switching element in spaced relation to the gate structure and capable of a deflected state and an undeflected state, wherein the device has a network of inherent capacitances, including an inherent capacitance between the gate structure and the nanotube switching element when the nanotube switching element is in the undeflected state, such that electrical stimulus at the control structure and at least one of the source and drain regions deflects the nanotube switching element into the deflected state and thus into contact with the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of operating an array of transistor devices in which each transistor device has a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region, and wherein each transistor device further includes a gate structure made of at least one of semiconductive or conductive material and disposed over an insulator over the channel region, a control structure including an electromechanically-deflectable nanotube switching element in spaced relation to the gate structure, and wherein each transistor device further includes a release line positioned in spaced relation to the nanotube switching element, the method comprising the acts of:
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applying substantially the same voltage values to the source and drain diffusions; applying a voltage to the nanotube switching element sufficient to deflect it into contact with the gate structure; applying voltages to the release line and the nanotube switching element for the devices to be written with voltages to place the nanotube switching element in a corresponding information state. - View Dependent Claims (20, 21)
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22. A crossbar array having n input lines and n output lines, comprising:
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n2 non-volatile transistor devices, each device including a source region and a drain region of a first semiconductor type of material; a channel region of a second semiconductor type of material disposed between the source and drain region; a gate structure made of at least one of semiconductive or conductive material and disposed over an insulator over the channel region; a control structure including an electromechanically-deflectable nanotube switching element in spaced relation to the gate structure;
the nanotube switching element being deflectable into non-volatile contact with the gate structure in response to signals being applied to the control structure and one of the source region and drain region; anda release line positioned in spaced relation to the nanotube switching element; a switch line decoder providing n select lines, each select line coupled to one of the source and drain regions of each device of a corresponding set of devices; and a release line decoder providing n select lines, each release line coupled to a release line of each device of a corresponding set of devices.
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Specification