Method for non-contact testing of marginal integrated circuit connections

• US 7,295,031 B1
• Filed: 07/12/2006
• Issued: 11/13/2007
• Est. Priority Date: 07/12/2006
• Status: Expired due to Fees

• Current Assignee: Agilent Technologies, Inc.
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Schneider, Myron J., Parker, Kenneth P., Jacobsen, Chris R., Norrgard, Dayton
• Primary Examiner(s): Nguyen; Vinh
• Assistant Examiner(s): Nguyen; Trung Q.
• Application Number:
  US11/484,952
• Time in Patent Office: 489 Days
• Field of Search: None
• US Class Current: 324/754.28
• CPC Class Codes: G01R 31/70 Testing of connections between components and printed circuit boards G01R31/68 takes precedence

Abstract

Non-contact connectivity testing of joints connecting circuit junctions are improved through knowledge of characteristics of semiconductor junctions connected to component nodes of components of a device under test (DUT) to allow detection of high-impedance joints.

Claims

1. A method for configuring parameters of a capacitive lead-frame test of a device under test, comprising:

applying a stimulus voltage to a node under test;

for each of a plurality of series resistance values in a predetermined range of series resistance values, obtaining a corresponding respective measurement representative of the capacitance between a sensor of a capacitive sensing probe and a given component node of a component of the device under test (DUT) to which a DUT node of the DUT is supposed to be connected;

based on the obtained measurements, determining semiconductor junction characteristics specific to the given component node of the component of the DUT; and

setting test parameters based on the semiconductor junction characteristics specific to the given component node.

2. The method of claim 1, further comprising:

generating a current-voltage curve and/or a capacitance-voltage curve based on the obtained measurements.

3. The method of claim 1, wherein the step for setting a test stimulus voltage comprises the steps of:

selecting a stimulus voltage to be applied to the DUT node to a voltage level which results in a measurable difference in capacitance between a high resistance value and a low resistance value.

4. The method of claim 3, further comprising:

setting one or more classification thresholds that reliably distinguish between a low-impedance series resistance value and a high-impedance series resistance value at the selected stimulus voltage.

5. The method of claim 4, further comprising the step of:

running a non-contact capacitive sensing test on the node under test using the test parameters set based on the semiconductor junction characteristics specific to the given component node.

6. The method of claim 5, wherein the step for running a non-contact capacitive sensing test comprises:

placing a sensor of a capacitive sensing probe on or in proximity to the component of the DUT;

applying the selected stimulus voltage to the DUT node of the DUT; and

obtaining a measurement representative of the capacitance between the component node and the sensor of the capacitive sensing probe.

7. The method of claim 6, further comprising the steps of:

comparing the obtained measurement or a derivative thereof to the one or more classification thresholds;

classifying a joint connecting the component node to the DUT node as low impedance or high impedance based on the results of the comparison.

8. A method for determining whether a pin of an electrical component of an electrical device under test (DUT) can be tested for high-impedance connectivity using non-contact connectivity testing, the pin being connected to a semiconductor junction of the electrical component and connected to a DUT node of the DUT, the method comprising:

obtaining an approximate value of termination resistance between a voltage source and the pin;

obtaining a stimulus voltage;

if the approximate value of the termination resistance is approximately zero at the stimulus voltage, performing the steps of;

determining whether a difference in effective capacitance for a low calibration resistance versus a high calibration resistance between the voltage source and the pin is significant with respect to

classifying the pin as a good candidate for non-contact connectivity testing if the difference in capacitance is significant with respect to the measurement'"'"'s accuracy; and

classifying the pin as not a good candidate for non-contact connectivity testing if the difference in capacitance is not significant with respect to the measurement'"'"'s accuracy; and

if the termination resistance is not approximately zero, performing the steps of;

selecting a calibration resistance close in value to the termination resistance;

determining whether, at the high end of the stimulus voltage, the difference in effective capacitance for a selected calibration resistance versus a high calibration resistance is significant with respect to the measurement'"'"'s accuracy;

classifying the pin as a good candidate for non-contact connectivity testing if the difference in capacitance is significant with respect to the measurement'"'"'s accuracy; and

classifying the pin as not a good candidate for non-contact connectivity testing if the difference in capacitance is not significant with respect to the measurement'"'"'s accuracy.

9. A method for optimizing test parameters specific to a semiconductor junction for use in a non-contact connectivity test by a semiconductor tester, comprising:

determining a stimulus voltage range corresponding to a measurable difference in capacitance within a measurement accuracy of the tester between a low resistance joint and a high resistance joint at a junction under test;

selecting a stimulus voltage value within the stimulus voltage range such that the selected stimulus voltage yields a relatively large capacitance measurement difference between a low impedance joint and a high impedance joint;

selecting one or more classification thresholds to respective one or more values which allow reliable classification of a joint under test as high impedance or low impedance based on a non-contact test measurement representing capacitance between a component node of a component of a device under test that is connected to the joint under test and a sensor of a capacitive sensing probe.

10. The method of claim 9, wherein the step of determining the stimulus voltage range comprises:

generating a capacitance-voltage curve; and

finding the range in the capacitance-voltage curve where a difference in capacitance between a high impedance joint and a low impedance joint is a measurable difference within the measurement accuracy of the tester.

11. The method of claim 9, further comprising:

obtaining a measurement representing capacitance between a component node connected to the joint under test and a sensor of a capacitive sensing probe;

classifying the joint under test as high impedance or low impedance based on the measurement relative to the one or more classification thresholds.

12. A method for determining connectivity of a joint between a component node of a component of a device under test (DUT) and a DUT node of the DUT, the component node connected to a semiconductor junction within the component of the DUT, the method comprising:

obtaining semiconductor junction characteristics specific to the component node;

selecting a stimulus voltage based on the semiconductor junction characteristics specific to the component node, wherein the selected stimulus voltage is set to a value that yields a relatively large capacitance measurement difference between a low impedance joint and a high impedance joint;

configuring at least one classification threshold based on the semiconductor junction characteristics of the component node, the at least one classification threshold set to allow reliable classification of the joint as high impedance or low impedance based on a non-contact test measurement representing capacitance between a component node of a component of a device under test that is connected to the joint under test and a sensor of a capacitive sensing probe;

placing a capacitive sensing probe on or in proximity to the component node of the component of the DUT and not on or in proximity to any semiconductor junction of the component that is not connected to the component node;

applying the selected stimulus voltage to the DUT node;

obtaining a measurement representative of an amount of capacitance between the component node and the capacitive sensing probe; and

classifying the joint based on the measurement and the at least one classification threshold.

13. The method of claim 12, wherein the at least one classification threshold is determined based on capacitance-voltage curves of a high impedance joint and a low impedance joint, and the selected stimulus voltage.

14. The method of claim 12 wherein the at least one classification threshold is defined as a threshold capacitance value, and if the measurement represents a capacitance above the threshold capacitance value, the joint is classified as low impedance, and if the measurement is below the threshold capacitance value, the joint is classified as high impedance.