Selective application of program inhibit schemes in non-volatile memory
First Claim
1. A method of programming non-volatile storage, comprising:
- determining which of a plurality of word lines is to receive a program voltage signal for programming, said word line is coupled to a first non-volatile storage element of a first group of non-volatile storage elements and a second non-volatile storage element of a second group of non-volatile storage elements, said first non-volatile storage element is to be inhibited from programming and said second non-volatile storage element is to be programmed;
selecting a program inhibit scheme based on said word line that is to receive said program voltage signal;
boosting a voltage potential of a channel of said first group of non-volatile storage elements using said selected program inhibit scheme; and
enabling programming of said second group of non-volatile storage elements.
3 Assignments
0 Petitions
Accused Products
Abstract
A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.
88 Citations
51 Claims
-
1. A method of programming non-volatile storage, comprising:
-
determining which of a plurality of word lines is to receive a program voltage signal for programming, said word line is coupled to a first non-volatile storage element of a first group of non-volatile storage elements and a second non-volatile storage element of a second group of non-volatile storage elements, said first non-volatile storage element is to be inhibited from programming and said second non-volatile storage element is to be programmed; selecting a program inhibit scheme based on said word line that is to receive said program voltage signal; boosting a voltage potential of a channel of said first group of non-volatile storage elements using said selected program inhibit scheme; and enabling programming of said second group of non-volatile storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A method of programming non-volatile storage, comprising:
-
determining a temperature of said non-volatile storage, said non-volatile storage including a first group of non-volatile storage elements to be inhibited from programming and a second group of non-volatile storage elements to be enabled for programming; selecting a program inhibit scheme based on said temperature; boosting a voltage potential of a channel of said first group of non-volatile storage elements using said selected program inhibit scheme; and enabling programming of said second group of non-volatile storage elements. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A non-volatile memory system, comprising:
-
a plurality of word lines; a first group of non-volatile storage elements having a first non-volatile storage element to be inhibited from programming; a second group of non-volatile storage elements having a second non-volatile storage element to be programmed; and managing circuitry in communication with said plurality of word lines and said first and second groups of non-volatile storage elements, said managing circuitry programs said second non-volatile storage element by; determining which word line of said plurality of word lines is coupled to said second non-volatile storage element, said word line is a first word line and is also coupled to said first non-volatile storage element, selecting a program inhibit scheme based on said first word line being selected for programming, boosting a voltage potential of a channel of said first group of non-volatile storage elements using said selected program inhibit scheme, and enabling programming of said second group of non-volatile storage elements. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
-
-
40. A non-volatile memory system, comprising:
-
a plurality of word lines; a first group of non-volatile storage elements having a first non-volatile storage element to be inhibited from programming, said first non-volatile storage element is coupled to a first word line; a second group of non-volatile storage elements having a second non-volatile storage element to be programmed, said second non-volatile storage element is coupled to said first word line; a temperature sensor; and managing circuitry in communication with said plurality of word lines, said first and second groups of non-volatile storage elements, and said temperature sensor, said managing circuit programs said second non-volatile storage element by; determining a temperature of said non-volatile memory system from said temperature sensor, selecting a program inhibit scheme based on said temperature, boosting a voltage potential of a channel of said first group of non-volatile storage elements using said selected program inhibit scheme, and enabling programming of said second group of non-volatile storage elements. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48)
-
-
49. A method of programming non-volatile storage, comprising:
-
programming one or more non-volatile storage elements coupled to a first word line, said programming includes; boosting a voltage potential of a channel of a first group of non-volatile storage elements having a first non-volatile storage element to be inhibited from programming, said first non-volatile storage element is coupled to said first word line, said boosting is accomplished according to a first program inhibit scheme, and enabling programming of a second group of non-volatile storage elements having a second non-volatile storage element to be programmed, said second non-volatile storage element is coupled to said first word line; and programming one or more non-volatile storage elements coupled to a second word line, said programming includes; boosting a voltage potential of said channel of said first group of non-volatile storage elements having a third non-volatile storage element to be inhibited from programming, said third non-volatile storage element is coupled to said second word line, said boosting is accomplished according to a second program inhibit scheme, and enabling programming of said second group of non-volatile storage elements having a fourth non-volatile storage element to be programmed, said fourth non-volatile storage element is coupled to said second word line. - View Dependent Claims (50, 51)
-
Specification