Please download the dossier by clicking on the dossier button x
×

Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs

  • US 7,295,586 B2
  • Filed: 02/21/2002
  • Issued: 11/13/2007
  • Est. Priority Date: 02/21/2002
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a vertical cavity surface emitting laser (VCSEL) with a tunnel junction, the method comprising:

  • locating a substrate in an MOCVD chamber;

    forming an active region over the substrate, the active region having a plurality of quantum wells;

    setting a temperature of the MOCVD chamber between 500°

    C. and 650°

    C.; and

    growing a tunnel junction including GaAs(1−

    X)
    Sbx over the active region using an MOCVD process in which a source of Ga, a source of Sb, and a source of As are present.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×