Multilayer substrate

• US 7,297,627 B2
• Filed: 05/12/2004
• Issued: 11/20/2007
• Est. Priority Date: 09/27/2002
• Status: Expired due to Term

• Current Assignee: Medtronic Minimed Incorporated (Medtronic Plc)
• Original Assignee: Medtronic Minimed Incorporated (Medtronic Plc)
• Inventors: Shah, Rajiv, Pendo, Shaun, Babiricki, Edward G.
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US10/845,002
• Publication Number:
  US 20040212076A1
• Time in Patent Office: 1,287 Days
• Field of Search: 438/618, 438/622, 438/626, 438/652, 438/653, 438/669, 438/722, 438/737, 438/742, 438/754
• US Class Current: 438/622
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/092 Dispersed materials, e.g. conductive pastes or inks
• CPC Class Codes: H05K 2201/0179 Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
• CPC Class Codes: H05K 2203/0278 Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
• CPC Class Codes: H05K 3/4061 for via connections in inorganic insulating substrates
• CPC Class Codes: H05K 3/4647 by applying an insulating layer around previously made via studs
• CPC Class Codes: H05K 3/4667 characterized by using an inorganic intermediate insulating layer
• CPC Class Codes: H05K 3/467 Adding a circuit layer by thin film methods H05K3/4647 takes precedence

Abstract

A multilayer substrate device formed from a base substrate and alternating metalization layers and dielectric layers. Each layer is formed without firing. Vias may extend through one of the dielectric layers such that two metalization layers surrounding the dielectric layers make. contact with each other. The vias may be formed by placing pillars on top of a metalization layer, forming a dielectric layer on top of the metalization layer and surrounding the pillars, and removing the pillars. Dielectric layers may be followed by other dielectric layers and metalization layers may be followed by other metalization layers. Vias in the substrate may be filled by forming an assembly around the substrate, the assembly including printing sheets containing a conductive ink and pressure plates for applying pressure. A vacuum may be applied to remove air in the ink. Pressure may then be applied to the printing sheets through the pressure plates. The conductive ink in the printing sheets is pushed through the vias when pressure is applied by the pressure plates.

Claims

1. A method for forming a multilayer substrate comprising:

obtaining a base substrate;

forming a first metallization layer on the base substrate without firing;

forming a plurality of alternating dielectric layers and metallization layers over the first metallization layer, wherein forming a plurality of dielectric layers comprises;

forming an opening in a mask;

affixing the mask to the first metallization layer of the substrate;

depositing an active material in the opening;

removing the mask after the active material has been deposited;

forming a dielectric around the active material; and

removing the active material after the dielectric has been formed around the active material.

2. The method of claim 1, wherein forming the active material results in a formation of pillars on one of the plurality of metallization layers.

3. The method of claim 1, wherein vias are formed through one of the plurality of dielectric layers when the active material is removed.

4. The method of claim 1, wherein obtaining a base substrate comprises obtaining a substrate made of a ceramic material.

5. The method of claim 1, wherein the base substrate has two opposite-facing sides and wherein the method further comprising providing an electronic circuit on the first metallization layer on one of the two sides of the base substrate and forming electrodes on the other of the two sides of the base substrate.

6. The method of claim 1, wherein removing the active material after the dielectric has been formed around the active material comprises exposing the active material to a dissolving solution.

7. The method of claim 6, the dissolving solution is ferric chloride.

8. The method of claim 1, wherein a height of a first formed dielectric layer of the plurality of dielectric layers is less than a height of the active material.

9. The method of claim 8, wherein the height of the first formed dielectric layer of the plurality of dielectric layers is about one-half the height of the active material.

10. The method of claim 8, wherein the height of the first formed dielectric layer of the plurality of dielectric layers is about one-third the height of the active material.