Method to form ultra high quality silicon-containing compound layers
First Claim
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1. A method of forming a layer, of an insulating silicon compound, having a desired thickness for an integrated circuit, comprising:
- performing multiple chemical vapor deposition cycles in a reaction chamber, each cycle comprising;
first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein the silicon layer has a silicon layer thickness between about 3 Å and
25 Å
, wherein depositing the silicon layer is performed under mass transport limited deposition conditions; and
second, reacting the silicon layer to partially form the layer of an insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater.
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Abstract
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
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20 Claims
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1. A method of forming a layer, of an insulating silicon compound, having a desired thickness for an integrated circuit, comprising:
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performing multiple chemical vapor deposition cycles in a reaction chamber, each cycle comprising; first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein the silicon layer has a silicon layer thickness between about 3 Å and
25 Å
, wherein depositing the silicon layer is performed under mass transport limited deposition conditions; andsecond, reacting the silicon layer to partially form the layer of an insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification