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Method to form ultra high quality silicon-containing compound layers

  • US 7,297,641 B2
  • Filed: 07/18/2003
  • Issued: 11/20/2007
  • Est. Priority Date: 07/19/2002
  • Status: Active Grant
First Claim
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1. A method of forming a layer, of an insulating silicon compound, having a desired thickness for an integrated circuit, comprising:

  • performing multiple chemical vapor deposition cycles in a reaction chamber, each cycle comprising;

    first, depositing a silicon layer on a substrate by exposing the substrate to a silicon source, wherein the silicon layer has a silicon layer thickness between about 3 Å and

    25 Å

    , wherein depositing the silicon layer is performed under mass transport limited deposition conditions; and

    second, reacting the silicon layer to partially form the layer of an insulating silicon compound, wherein trisilane is the silicon source used to deposit a first silicon layer on the substrate in a first performance of a cycle of the plurality of cycles, wherein the silicon-containing compound layer has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater.

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