Semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
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Citations
32 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a drain electrode; a source electrode; means for controlling current flow electrically coupled to the drain electrode and the source electrode, wherein the means for controlling current flow is comprised at least partially of a channel in amorphous form; a gate electrode separated from the channel by a gate dielectric; and wherein the channel includes one or more compounds selected from the group of formulas including AXBXOX, AXBXCXOX, and AXBXCXDXOX, and wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C and D is selected from the group of Zn, Cd, Ga, In, each 0 is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different. - View Dependent Claims (15, 16)
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17. A semiconductor device formed by steps, comprising:
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providing a drain electrode; providing a source electrode; providing a precursor composition consisting of one or more precursor compounds selected from the group consisting of;
zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode, wherein the multicomponent oxide is of an amorphous form; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (18, 19, 20, 21)
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22. A method for operating a semiconductor device, comprising:
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providing a semiconductor device that includes a source electrode, a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide including at least one metal cation from group 12, and at least one metal cation from group 13, wherein group 12 cations includes Zn and Cd, and group 13 cations includes Ga and In, to form at least one of a three-component oxide, a four-component oxide, and a two-component oxide that includes zinc-gallium oxide, cadmium-gallium oxide, cadmium-indium oxide, wherein at least one of the two-, three-, and four-component oxides is formed of an amorphous form; and applying a voltage to the gate electrode to effect a flow of electrons through the channel. - View Dependent Claims (23, 24)
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25. A display device, comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more metal oxides that include zinc-gallium, cadmium-gallium, and cadmium-indium, and wherein at least one metal oxide of the channel is of an amorphous form; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
Specification