Semiconductor method and device with mixed orientation substrate
First Claim
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1. A semiconductor device comprising:
- a semiconductor body having semiconductor material of a first crystal orientation;
a first transistor formed in the semiconductor material of the first crystal orientation;
an insulating layer overlying portions of the semiconductor body;
a semiconductor layer overlying the insulating layer, the semiconductor layer having a second crystal orientation;
a second transistor formed in the semiconductor layer having the second crystal orientation; and
an isolation region disposed over the insulating layer between the first transistor and the second transistor, wherein the isolation region is laterally positioned such that the entire isolation region overlies the insulating layer.
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Abstract
A semiconductor device includes a semiconductor body having semiconductor material of a first crystal orientation. A first transistor is formed in the semiconductor material of the first crystal orientation. An insulating layer overlies portions of the semiconductor body and a semiconductor layer overlies the insulating layer. The semiconductor layer has a second crystal orientation. A second transistor is formed in the semiconductor layer having the second crystal orientation. In the preferred embodiment, the semiconductor body is (100) silicon, the first transistor is an NMOS transistor, the semiconductor layer is (110) silicon and the second transistor is a PMOS transistor.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a semiconductor body having semiconductor material of a first crystal orientation; a first transistor formed in the semiconductor material of the first crystal orientation; an insulating layer overlying portions of the semiconductor body; a semiconductor layer overlying the insulating layer, the semiconductor layer having a second crystal orientation; a second transistor formed in the semiconductor layer having the second crystal orientation; and an isolation region disposed over the insulating layer between the first transistor and the second transistor, wherein the isolation region is laterally positioned such that the entire isolation region overlies the insulating layer. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9)
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6. A semiconductor device comprising:
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a semiconductor body having semiconductor material of a first crystal orientation; a first transistor formed in the semiconductor material of the first crystal orientation; an insulating layer overlying portions of the semiconductor body; a semiconductor layer overlying the insulating layer, the semiconductor layer having the second crystal orientation; a semiconductor region overlying the semiconductor layer, the semiconductor region having the second crystal orientation; a second transistor formed in the semiconductor region; and an isolation region disposed over the semiconductor body and located laterally between the first transistor and the second transistor; wherein the semiconductor region has a lateral dimension that is less than a lateral dimension of the semiconductor layer so that a portion of the semiconductor layer extends beyond the semiconductor region, wherein the isolation region overlies the portion of the semiconductor layer that extends beyond the semiconductor region. - View Dependent Claims (10, 11)
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12. A semiconductor device comprising:
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a semiconductor body having semiconductor material of a first crystal orientation; an insulating layer overlying portions of the semiconductor body; a semiconductor layer overlying the insulating layer, the semiconductor layer having a second crystal orientation, the semiconductor layer having an opening over a portion of the semiconductor body, the opening being defined by sidewalls in the semiconductor layer; a first semiconductor region overlying the semiconductor body and having an upper surface, the first semiconductor region being of the first crystal orientation; a second semiconductor region overlying the semiconductor layer and having an upper surface that is substantially co-planar with the upper surface of the first region, the second semiconductor region being of the second crystal orientation, wherein the second semiconductor region has a lateral dimension that is less than a lateral dimension of the semiconductor layer so that a portion of the semiconductor layer extends beyond the semiconductor region; an isolation region disposed over the semiconductor body and located laterally between the first region and the second region, the isolation region having sidewalls that are substantially aligned with the sidewalls of the insulating layer such that the first semiconductor region abuts the substantially aligned sidewalls, wherein the isolation region overlies the portion of the semiconductor layer that extends beyond the second semiconductor region; a first transistor formed in the first semiconductor region; and a second transistor formed in the second semiconductor region. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification