Semiconductor device with recessed L-shaped spacer and method of fabricating the same
First Claim
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1. A semiconductor device with a recessed L-shaped spacer, comprising:
- a conductor pattern;
an L-shaped spacer comprising a vertical portion and a horizontal portion, the vertical portion disposed on lower sidewalls of the conductor pattern, exposing upper sidewalls thereof; and
a top spacer on the L-shaped spacer, wherein a width ratio of the vertical portion of the L-shaped spacer to the top spacer is at least about 2;
1, wherein the width of the vertical portion is about 350-450 Å and
the width of the top spacer is about 100-200 Å
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Abstract
A semiconductor device with a recessed L-shaped spacer and a method for fabricating the same. A recessed L-shaped spacer includes a vertical portion and a horizontal portion. The vertical portion is disposed on lower sidewalls of a conductor pattern, exposing upper sidewalls thereof. A top spacer is on the L-shaped spacer, wherein a width ratio of the vertical portion of the L-shaped spacer to the top spacer is at least about 2:1.
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Citations
19 Claims
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1. A semiconductor device with a recessed L-shaped spacer, comprising:
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a conductor pattern; an L-shaped spacer comprising a vertical portion and a horizontal portion, the vertical portion disposed on lower sidewalls of the conductor pattern, exposing upper sidewalls thereof; and a top spacer on the L-shaped spacer, wherein a width ratio of the vertical portion of the L-shaped spacer to the top spacer is at least about 2;
1, wherein the width of the vertical portion is about 350-450 Å and
the width of the top spacer is about 100-200 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device with a recessed L-shaped spacer, comprising:
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a gate pattern; an L-shaped spacer comprising a vertical portion and a horizontal portion, the vertical portion being on lower sidewalls of the gate pattern, exposing upper sidewalls thereof; a top spacer on the L-shaped spacer, protruding above the same, thereby providing a gap between the top spacer and the upper sidewalls of the gate pattern; and source/drain regions in the substrate oppositely adjacent to the gate pattern, wherein a width ratio of the vertical portion of the L-shaped spacer to the top spacer is at least about 2;
1, and the width of the vertical portion to the height of the exposed upper sidewalls is about 1-2;
1, wherein the width of the vertical portion is about 350-450 Å and
the width of the top spacer is about 100-200 Å
. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification