Structure and method of making sealed capped chips

• US 7,298,030 B2
• Filed: 09/24/2004
• Issued: 11/20/2007
• Est. Priority Date: 09/26/2003
• Status: Expired due to Fees

• Current Assignee: Tessera, Inc. (Adeia Inc.)
• Original Assignee: Tessera, Inc. (Adeia Inc.)
• Inventors: Haba, Belgacem, Humpston, Giles, Tuckerman, David B., McWilliams, Bruce M.
• Primary Examiner(s): Cao; Phat X.
• Application Number:
  US10/948,976
• Publication Number:
  US 20050082653A1
• Time in Patent Office: 1,152 Days
• Field of Search: 257/680, 257/704, 257/710
• US Class Current: 257/680
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/06135 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1401 : Structure
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 : the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/4824 : Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/484 : Connecting portions
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/82101 : by additive methods, e.g. direct writing
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 23/04 : characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/14618 : Containers
• CPC Class Codes: H01L 27/14627 : Microlenses
• CPC Class Codes: H01L 27/14636 : Interconnect structures
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16151 : Cap comprising an aperture, e.g. for pressure control, encapsulation
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/16235 : Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H03H 3/007 : for the manufacture of electromechanical resonators or networks
• CPC Class Codes: H03H 9/0547 : consisting of a vertical arrangement H03H9/0566 takes precedence
• CPC Class Codes: H03H 9/0585 : consisting of an adhesive layer
• CPC Class Codes: H03H 9/059 : consisting of mounting pads or bumps
• CPC Class Codes: H03H 9/1057 : for microelectro-mechanical devices
• CPC Class Codes: H03H 9/1064 : for surface acoustic wave [SAW] devices
• CPC Class Codes: H03H 9/1071 : the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device

Abstract

A method of making a plurality of sealed assemblies is provided which includes a) assembling a first element to a second element so that a bottom surface of the first element faces downwardly toward a front surface of the second element and a top surface of the first element faces upwardly away from the second element; and (b) forming ring seals surrounding regions of the front surface of the second element by introducing flowable material between the first element and the second element from the top surface of the first element through openings in the first element. A chip is provided which includes: (a) a body defining a front surface and one or more circuit elements on or within the body; (b) one or more bond pads exposed at the front surface in a bond pad region; and (c) a metallic ring exposed at the front surface, the ring substantially surrounding the bond pad region. Sealed chip assemblies are formed by sealing an array of the chips, e.g., in wafer form, to a cap element.

Claims

1. A capped chip, comprising:

a chip having a front surface, one or more devices at said front surface, and a first annular solder-wettable metallization enclosing said one or more devices;

a cap member having a top surface, a bottom surface opposite said top surface, one or more through holes extending between said top and bottom surfaces and a second annular solder-wettable metallization at said bottom surface in registration with said one or more through holes and said first annular solder-wettable metallization; and

a sealing medium including a fusible material bonded to said first and second solder-wettable metallizations.

2. The capped chip as claimed in claim 1, wherein said sealing medium includes at least one material selected from the group consisting of solder, eutectic composition, and tin.

3. The capped chip as claimed in claim 2, wherein said one or more through holes is sized to permit a flow of said sealing medium from said one or more through holes onto said first and second annular solder-wettable metallizations.

4. The capped chip as claimed in claim 3, wherein said one or more through holes is tapered to become smaller in a direction from said top surface of said cap member towards said bottom surface.

5. The capped chip as claimed in claim 3, wherein said chip further includes a plurality of bond pads exposed at said front surface enclosed by said first annular solder-wettable metallization, and a plurality of metallic interconnects extending from said bond pads at least partially through said cap member.