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Submount for mounting semiconductor device

  • US 7,298,049 B2
  • Filed: 03/03/2003
  • Issued: 11/20/2007
  • Est. Priority Date: 03/06/2002
  • Status: Active Grant
First Claim
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1. A submount, comprising:

  • (a) a submount substrate; and

    (b) a solder layer that;

    (b1) is formed on the top surface of the submount substrate; and

    (b2) has a surface roughness, Ra, of at most 0.18 μ

    m and has an average crystal-grain diameter of at most 3.5 μ

    m.

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