Submount for mounting semiconductor device
First Claim
Patent Images
1. A submount, comprising:
- (a) a submount substrate; and
(b) a solder layer that;
(b1) is formed on the top surface of the submount substrate; and
(b2) has a surface roughness, Ra, of at most 0.18 μ
m and has an average crystal-grain diameter of at most 3.5 μ
m.
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Abstract
A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.
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Citations
9 Claims
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1. A submount, comprising:
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(a) a submount substrate; and (b) a solder layer that; (b1) is formed on the top surface of the submount substrate; and (b2) has a surface roughness, Ra, of at most 0.18 μ
m and has an average crystal-grain diameter of at most 3.5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification