Lithographic apparatus and device manufacturing method

• US 7,298,455 B2
• Filed: 06/17/2005
• Issued: 11/20/2007
• Est. Priority Date: 06/17/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Sinke, Arnold, Hauschild, Jan
• Primary Examiner(s): FULLER, RODNEY EVAN
• Application Number:
  US11/154,950
• Publication Number:
  US 20060285099A1
• Time in Patent Office: 886 Days
• Field of Search: 355/53, 355/55, 355/67, 355/71
• US Class Current: 355/55
• CPC Class Codes: G03F 7/70066 Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
• CPC Class Codes: G03F 7/70641 Focus

Abstract

The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

Claims

1. A lithographic apparatus, comprising:

a substrate table constructed to hold a substrate;

a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate;

a patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus (DOF);

a measurement system that is arranged to measure a surface topography of at least part of the target portion,

wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

2. The lithographic apparatus of claim 1, wherein the projection system is arranged to maximize the dimension of the adjusted exposure slit area by reducing the dimension of the exposure slit area if the surface topography variations over the exposure slit area exceed the depth of focus.

3. The lithographic apparatus of claim 1, wherein the projection system is arranged to maximize the dimension of the adjusted exposure slit area by increasing the dimension of the exposure slit area if the surface topography variations over the exposure slit area are smaller than the depth of focus.

4. The lithographic apparatus of claim 1, wherein the exposure slit area is substantially rectangular, having a width and a length dimension.

5. The lithographic apparatus of claim 4, wherein adjusting the dimension of the exposure slit area includes decreasing at least one of the width and the length dimension of the exposure slit area.

6. The lithographic apparatus of claim 1, wherein the projection system is arranged to reduce at least one of the width and the length dimension of the exposure slit area to a size smaller than the distance over which the surface topography variations equal the depth of focus (DOF).

7. The lithographic apparatus of claim 1, wherein the measurement system is arranged to measure the surface topography of substantially the complete substrate before projecting the radiation beam onto the substrate.

8. The lithographic apparatus of claim 1, wherein the measurement system is arranged to measure the surface topography of a first substrate while the projection system projects the radiation beam onto a second substrate.

9. The lithographic apparatus of claim 1, wherein the measurement system is arranged to measure the surface topography during the projection of the radiation beam onto the substrate.

10. The lithographic apparatus of claim 1, further including at least one actuator to adjust a height of the substrate table.

11. The lithographic apparatus of claim 1, including at least one actuator to adjust a tilt of the substrate table.

12. The lithographic apparatus of claim 1, including at least one actuator that is arranged to, during every exposure, optimize the positioning of the substrate table for that exposure.

13. The lithographic apparatus of claim 1, wherein the dimension of the exposure slit is reduced in a direction perpendicular to a scanning direction.

14. A device manufacturing method comprising:

projecting a patterned beam of radiation through an exposure slit area onto a target portion of a substrate, which substrate is arranged on a substrate table constructed to hold the substrate, the patterned radiation beam being in focus over a depth of focus (DOF);

using a measurement system to measure a surface topography of at least part of the substrate; and

adjusting at least one of a width and a length dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

15. The method of claim 14, wherein the at least one of the width and the length dimension of the exposure slit area is reduced to a size smaller than the distance over which the surface topography variations equal the depth of focus (DOF).

16. The method of claim 14, comprising dividing a pattern to be projected on the substrate in two or more parts before exposure.

17. The method of claim 16, comprising stitching said parts at scribe lanes.