Method and system for controlling a product parameter of a circuit element

• US 7,299,105 B2
• Filed: 01/06/2005
• Issued: 11/20/2007
• Est. Priority Date: 02/27/2004
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Holfeld, Andre, Raebiger, Jan, Herrmann, Lutz
• Primary Examiner(s): Bahta; Kidest
• Application Number:
  US11/030,863
• Publication Number:
  US 20050192700A1
• Time in Patent Office: 1,048 Days
• Field of Search: 700/121, 700/12, 700/29, 700108-110, 700/98, 702/187, 438/174, 438/217, 257/E21.268, 703/13, 703/2
• US Class Current: 700/121
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Abstract

Methods and systems are disclosed that allow an adjustment of a product parameter, such as operating speed, of a circuit element, such as a field effect transistor, during the fabrication of the device. A manufacturing process downstream of a first controlled process is controlled by a superior control scheme in response to the measurement data of the first and second processes and on the basis of a sensitivity function, which describes the effect a variation of the product parameter generates in the measurement data. The superior control scheme may provide a compensated target value for the downstream process.

Claims

1. A method of controlling a product performance parameter of a circuit element, the method comprising:

performing a first controlled manufacturing process on the basis of first process measurement data to form a first pre-form of said circuit element;

performing a second controlled manufacturing process on the basis of second process measurement data to form a second pre-form of said circuit element; and

controlling said second controlled manufacturing process on the basis of said first process measurement data and a correlation of said first and second measurement data with said product parameter, wherein said correlation represents a sensitivity of said first and second measurement data with respect to a variation of said product performance parameter.

2. The method of claim 1, wherein said first measurement data comprise post-process measurement data specifying a characteristic of said first pre-form.

3. The method of claim 2, wherein said first measurement data include pre-process measurement data and said first manufacturing process is controlled on the basis of the pre-process and the post-process measurement data.

4. The method of claim 1, wherein controlling said second controlled manufacturing process comprises determining a compensated target value for said second controlled manufacturing process.

5. The method of claim 1, wherein said circuit element is formed on a first substrate, said first measurement data are obtained for said first substrate and said second controlled manufacturing process is controlled on the basis of said first measurement data for said first substrate.

6. The method of claim 1, wherein said circuit element is formed on a plurality of substrates and said second controlled manufacturing process for said plurality of substrates is controlled on the basis of said first measurement data obtained from said plurality of substrates.

7. The method of claim 1, wherein said second process measurement data comprises second post-process measurement data and said second manufacturing process is controlled on the basis of said second post-process measurement data.

8. The method of claim 1, wherein said second process measurement data comprises second pre-process measurement data and said second manufacturing process is controlled on the basis of said second pre-process measurement data.

9. The method of claim 1, wherein said fist and second controlled manufaturing processes are APC applications determining, on the basis of the fist and second measurement data,respectively, a fist and a second target value for the first and second manufaturing process, respectively.

10. The method of claim 1, wherein said first pre-form of the circuit element has a critical dimension representing a design parameter determining an operating speed of the circuit element.

11. The method of claim 10, wherein said first pre-form represents a gate electrobe.

12. The method of claim 11, wherein said first process measurement data are indicative of a gate length of said gate electrobe.

13. The method of claim 11, wherein said second manufaturing process comprises a rapid thermal anneal (RTA) process for activating dopants implanted adjacent to said gate electrobe.

14. The method of claim 13, wherein controlling said second controlled manufaturing process comprises determining a compensated target temperature for said RTA process and controlling the RTA process on the basis of said compensated target temperature.

15. The method of claim 14, wherein determining said compensated target value comprises establishing an upper and a lower limit for said compensated target value.

16. The method of claim 14, wherein determining said compensated target value comprises determining a range of values of said first process measurement data for which said compensated target value is substantially equal to a target value used in said second controlled manufacturing process.

17. The method of claim 14, wherein determining said compensated target value comprises determining a weighting factor to adjust a control effect of the compensated target value.

29. The method of claim 1, wherein performing said first controlled manufacturing process further comprises performing said first controlled manufacturing process on the basis of a first target value, performing said second controlled manufacturing process further comprises performing said second controlled manufacturing process on the basis of a second target value, and controlling said second controlled manufacturing process further comprises adjusting said second target value on the basis of said first process measurement data and a correlation of said first and second measurement data with the product performance parameter, wherein said correlation includes a damping term.

18. A method of controlling a product performance parameter of a circuit element, the method comprising:

performing a first manufacturing process that is controlled by a first APC application to form a first pre-form of said circuit element;

performing a second manufacturing process that is controlled by a second APC application to form a second pre-form of said circuit element; and

controlling said second manufacturing process on the basis of said first APC application and second APC application and product measurement data indicative of said product performance parameter, wherein controlling said second manufacturing process comprises determining a correlation quantifying a sensitivity of measurement data used at least the first APC application for a variation in said product performance parameter.

19. The method of claim 18, wherein said first APC application is based on at least first post-process measurement data and controlling said second manufacturing process is based on said first post-process measurement data.

20. The method of claim 19, wherein controlling said second manufacturing process comprises determining a compensated target value for said second APC application.

21. The method of claim 18, further comprising performing a third manufacturing process for forming a third pre-form of said circuit element, said third manufacturing process being controlled by a third APC application, the method further comprising controlling said third manufacturing process on the basis of said first, second and third APC applications.

22. The method of claim 21, wherein controlling said second and third manufacturing processes comprises determining compensated target values for each of the second and third APC applications.

23. The method of claim 18, wherein said first pre-form represents a gate electrode.

24. The method of claim 23, wherein first measurement data used in said first APC application are indicative of a gate length of said gate electrode.

25. The method of claim 24, wherein said second manufacturing process comprises a rapid thermal anneal (RTA) process for activating dopants implanted adjacent to said gate electrode.

26. The method of claim 25, wherein controlling said second manufacturing process comprises determining a compensated target temperature for said second APC application controlling said RTA process.

30. The method of claim 18, wherein performing said first manufacturing process further comprises performing said first manufacturing process on the basis of a first target value, performing said second manufacturing process further comprises performing said second manufacturing process on the basis of a second target value, and controlling said second manufacturing process further comprises adjusting said second target value on the basis of said first process measurement data and a correlation of said first and second measurement data with the product performance parameter, wherein said correlation includes a damping term.

27. A multi-step APC control system comprising:

a first APC controller configured to control a first manufacturing process;

a second APC controller configured to control a second manufacturing process; and

a control unit connected to the first and second APC controllers, said control unit being configured to determine a compensated target value for said second APC controller on the basis of measurement data used by said first APC controller and sensitivity information relating said measurement data to a product performance parameter of a circuit element formed by at least said first and second manufacturing processes.

28. The multi-step APC system of claim 27, wherein said first manufacturing process comprises a gate electrode formation process and said second manufacturing process comprises a rapid thermal anneal process.

31. The system of claim 27, wherein said control unit being is further configured to determine said compensated target value on the basis of a damping term.