Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials
First Claim
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1. A method, comprising:
- depositing magnetic material onto a bcc-structured underlayer to induce the magnetic material to form a bcc-structured magnetic layer, wherein the magnetic material by itself does not form a thermodynamically stable bcc-structure at room temperature and a pressure less than 1 atmosphere, and wherein the magnetic material includes material selected from the group consisting of ferromagnetic materials and ferrimagnetic materials; and
forming a tunnel barrier over the deposited magnetic material to permit spin-polarized current to pass between the tunnel barrier and the magnetic material, wherein the tunnel barrier is selected from the group of tunnel barriers consisting of MgO and Mg—
ZnO.
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Abstract
Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magnetic material, in combination with a tunnel barrier and other elements, forms a magnetic tunneling device, such as a magnetic tunnel junction that may have a tunneling magnetoresistance of 100% or more. Suitable tunnel barriers include MgO and Mg—ZnO, and the magnetic material may be Co. The templating material may include such elements as V, Cr, Nb, Mo, and W, or the tunnel barrier MgO may itself serve as the templating material.
78 Citations
75 Claims
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1. A method, comprising:
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depositing magnetic material onto a bcc-structured underlayer to induce the magnetic material to form a bcc-structured magnetic layer, wherein the magnetic material by itself does not form a thermodynamically stable bcc-structure at room temperature and a pressure less than 1 atmosphere, and wherein the magnetic material includes material selected from the group consisting of ferromagnetic materials and ferrimagnetic materials; and forming a tunnel barrier over the deposited magnetic material to permit spin-polarized current to pass between the tunnel barrier and the magnetic material, wherein the tunnel barrier is selected from the group of tunnel barriers consisting of MgO and Mg—
ZnO. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A device, comprising:
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a tunnel barrier selected from the group of tunnel barriers consisting of MgO and Mg—
ZnO;a bcc structure; and a magnetic layer between the tunnel barrier and the bcc structure, wherein the magnetic layer; i) by itself does not form a thermodynamically stable bcc-structure at room temperature and a pressure less than 1 atmosphere, ii) but is nevertheless bcc-structured because of its proximity to the bcc structure, iii) includes material selected from the group consisting of ferromagnetic materials and ferrimagnetic materials, and iv) is in proximity with the tunnel barrier, thereby permitting spin-polarized current to pass between the tunnel barrier and the magnetic layer. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A device, comprising:
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a bcc magnetic material selected from the group consisting of ferromagnetic materials and ferrimagnetic materials; and a tunnel barrier in proximity with the bcc magnetic material, permitting spin-polarized current to pass between the tunnel barrier and the magnetic layer, wherein the bcc magnetic material by itself does not form a thermodynamically stable bcc-structure at room temperature and a pressure less than 1 atmosphere, but is nevertheless bcc because of its proximity to a nearby material having a structure that induces the magnetic material to form a bcc-structure. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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58. A method, comprising:
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positioning preselected magnetic material and a tunnel barrier in proximity with each other, to form a structure that permits spin-polarized current to pass between the tunnel barrier and bcc magnetic material, wherein the preselected magnetic material; i) by itself does not form a thermodynamically stable bcc-structure at room temperature and a pressure less than 1 atmosphere, ii) but is nevertheless bcc-structured because of its proximity to a nearby material having a structure that induces it to form said bcc magnetic material, and iii) includes material selected from the group consisting of ferromagnetic materials and ferrimagnetic materials. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75)
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Specification