Structures and methods to enhance copper metallization

• US 7,301,190 B2
• Filed: 07/16/2002
• Issued: 11/27/2007
• Est. Priority Date: 01/18/2000
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Farrar, Paul A.
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US10/195,965
• Publication Number:
  US 20020177302A1
• Time in Patent Office: 1,960 Days
• Field of Search: 438/687, 438/653, 438/654, 438/627, 438/643, 438/644, 438/670, 257/758, 257/296, 257/300
• US Class Current: 257/296
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76823 transforming an insulating layer into a conductive layer
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76859 by ion implantation
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76874 for electroless plating
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 21/7688 by deposition over sacrificial masking layer, e.g. lift-off lift-off per se H01L21/0272
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.

Claims

1. A memory cell comprising:

a capacitor; and

at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron; and

a copper metallization layer on the inhibiting layer.

2. The memory cell of claim 1, wherein the gate of the at least one transistor is adapted to receive an access signal to selectively access the capacitor.

3. A memory array comprising:

at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron; and

a copper metallization layer on the inhibiting layer.

4. A memory device comprising:

a memory array that comprises at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron; and

a copper metallization layer on the inhibiting layer;

an address decoder;

a row access circuitry;

a column access circuitry;

a controller; and

an input/output circuit.

5. A circuit module comprising:

a plurality of dies, wherein at least one die comprises at least one integrated circuit, wherein the at least one integrated circuit comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;

a copper metallization layer on the inhibiting layer; and

a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control.

6. A memory module comprising:

a plurality of memory devices, wherein at least one memory device comprises at least one memory array, the at least one memory array comprises at least one memory cell, wherein the at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron; and

a copper metallization layer on the inhibiting layer; and

a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal; and

a plurality of data links coupled to the plurality of memory devices to communicate data.

7. An electronic system comprising:

a plurality of circuit modules that comprises a plurality of dies, wherein at least one die of the plurality of dies comprises at least one integrated circuit, wherein the at least one integrated circuit comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;

a copper metallization layer on the inhibiting layer; and

a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control; and

a user interface.

8. A memory system comprising:

a plurality of memory modules that comprises a plurality of memory devices, wherein at least one memory device comprises at least one memory array, the at least one memory array comprises at least one memory cell, wherein the at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron; and

a copper metallization layer on the inhibiting layer;

a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;

a plurality of data links coupled to the plurality of memory devices to communicate data; and

a memory controller.

9. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;

a copper metallization layer on the inhibiting layer;

a memory system;

at least one user interface device, wherein the at least one user interface device includes a monitor;

at least one output device, wherein the at least one output device includes a printer; and

at least one bulk storage device.

10. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid; and

a copper metallization layer on the inhibiting layer.

11. The system of claim 10, wherein the polymer is fluorinated.

50. The system of claim 10, wherein the copper metallization layer does not include a copper alloy.

51. The system of claim 10, wherein the inhibiting layer consists essentially of the compound.

52. The system of claim 10, wherein each of the insulator layer consists essentially of the first substance.

53. The system of claim 10, wherein one or more elements of the second substance are selected from a group consisting of chromium, molybdenum, zirconium, hafnium, vanadium, niobium, magnesium, and boron.

12. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal; and

a copper metallization layer on the inhibiting layer.

13. The system of claim 12, wherein the polymer is fluorinated.

14. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum; and

a copper metallization layer on the inhibiting layer.

15. The system of claim 14, wherein the polymer is fluorinated.

16. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal; and

a copper metallization layer on the inhibiting layer.

17. The system of claim 16, wherein the polymer is fluorinated.

18. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium; and

a copper metallization layer on the inhibiting layer.

19. The system of claim 18, wherein the polymer is fluorinated.

20. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid; and

a copper metallization layer on the inhibiting layer.

21. The system of claim 20, wherein the polymer is fluorinated.

22. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron; and

a copper metallization layer on the inhibiting layer.

23. The system of claim 22, wherein the polymer is fluorinated.

24. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid; and

a copper metallization layer on the inhibiting layer.

25. The system of claim 24, wherein the polymer is fluorinated.

26. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal; and

a copper metallization layer on the inhibiting layer.

27. The system of claim 26, wherein the polymer is fluorinated.

28. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum; and

a copper metallization layer on the inhibiting layer.

29. The system of claim 28, wherein the polymer is fluorinated.

30. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal; and

a copper metallization layer on the inhibiting layer.

31. The system of claim 30, wherein the polymer is fluorinated.

32. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium; and

a copper metallization layer on the inhibiting layer.

33. The system of claim 32, wherein the polymer is fluorinated.

34. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid; and

a copper metallization layer on the inhibiting layer.

35. The system of claim 34, wherein the polymer is fluorinated.

36. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron; and

a copper metallization layer on the inhibiting layer.

37. The system of claim 36, wherein the polymer is fluorinated.

38. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid; and

a copper metallization layer on the inhibiting layer.

39. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid; and

a copper metallization layer on the inhibiting layer.

40. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron; and

a copper metallization layer on the inhibiting layer.

41. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid; and

a copper metallization layer on the inhibiting layer.

42. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid; and

a copper metallization layer on the inhibiting layer.

43. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an aerogel;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron; and

a copper metallization layer on the inhibiting layer.

44. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid; and

a copper metallization layer on the inhibiting layer.

45. The system of claim 44, wherein the insulator oxide compound includes silicon dioxide.

46. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid; and

a copper metallization layer on the inhibiting layer.

47. The system of claim 46, wherein the insulator oxide compound includes silicon dioxide.

48. A computer system comprising:

a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises;

an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;

an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron; and

a copper metallization layer on the inhibiting layer.

49. The system of claim 48, wherein the insulator oxide compound includes silicon dioxide.