Light-emitting devices with high light collimation
First Claim
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1. A light-emitting diode comprising:
- a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region,wherein;
the first layer comprises a semiconductor material and a surface of the first layer is configured so that light generated by the light generating region can emerge from the light-emitting diode via the surface of the first layer;
the surface of the first layer has a dielectric function that varies spatially according to a pattern, wherein the pattern is defined, at least in part, by a plurality of non-concentric holes; and
the pattern is configured so that light generated by the light-generating region that emerges from the light-emitting diode via the surface of the first layer is substantially incoherent and more collimated than a Lambertian distribution of light.
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Abstract
Light-emitting devices, and related components, systems and methods are disclosed. In some embodiments, the devices (e.g., light-emitting diodes) comprise a multi-layer stack of materials including a light generating region and a first layer supported by the light generating region. The surface of the first layer may have a dielectric function that varies spatially according to a pattern. The pattern may be configured so that light that emerges from the device via the surface of the first layer is more collimated than a Lambertian distribution of light.
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Citations
40 Claims
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1. A light-emitting diode comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region, wherein; the first layer comprises a semiconductor material and a surface of the first layer is configured so that light generated by the light generating region can emerge from the light-emitting diode via the surface of the first layer; the surface of the first layer has a dielectric function that varies spatially according to a pattern, wherein the pattern is defined, at least in part, by a plurality of non-concentric holes; and the pattern is configured so that light generated by the light-generating region that emerges from the light-emitting diode via the surface of the first layer is substantially incoherent and more collimated than a Lambertian distribution of light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19, 20, 24, 26, 27, 30, 32, 38)
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18. A light-emitting diode comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region, wherein; the first layer comprises a semiconductor material and a surface of the first layer is configured so that light generated by the light generating region can emerge from the light-emitting diode via the surface of the first layer; the surface of the first layer has a dielectric function that varies spatially according to a pattern, wherein the pattern is defined, at least in part, by a plurality of separate features; and the pattern is configured so that light generated by the light-generating region that emerges from the light-emitting diode via the surface of the first layer is substantially incoherent and more collimated than a Lambertian distribution of light, wherein the pattern extends beyond the first layer.
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21. A wafer, comprising:
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a plurality of light-emitting diodes, at least some of the light-emitting diodes comprising; a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region, the first layer comprises a semiconductor material and a surface of the first layer is configured so that light generated by the light-generating region can emerge from the light-emitting diode via the surface of the first layer, the surface of the first layer having a dielectric function that varies spatially according to a pattern defined, at least in part, by a plurality of non-concentric holes, and the pattern being configured so that light generated by the light-generating region that emerges from the light-emitting diode via the surface of the first layer is substantially incoherent and more collimated than a Lambertian distribution of light, wherein the wafer includes at least about five light-emitting diodes per square centimeter. - View Dependent Claims (22, 23, 25, 28, 29, 31, 33, 39)
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34. A light-emitting diode comprising:
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a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region, wherein; the first layer comprises a semiconductor material and a surface of the first layer is configured so that light generated by the light generating region can emerge from the light-emitting diode via the surface of the first layer; the surface of the first layer has a dielectric function that varies spatially according to a pattern defined, at least in part, by a plurality of holes being devoid of material within a perimeter defined by the first layer; and the pattern is configured so that light generated by the light-generating region that emerges from the light-emitting diode via the surface of the first layer is more collimated than a Lambertian distribution of light. - View Dependent Claims (35, 36, 37, 40)
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Specification