Exposure system and method
First Claim
1. An exposure system, comprising:
- a compensation unit configured to;
receive a fine-tuning value for an overlay correction parameter for a product in a first run;
receive an adjustment period for an exposure tool;
receive an adjustment time for the exposure tool;
receive a process time for the product in a second run, the second run being subsequent to the first run;
receive an equipment baseline offset of the exposure tool after adjustment; and
compensate the fine-tuning value for the overlay correction parameter for the product according to;
the original fine-tuning value;
the equipment baseline offset;
the adjustment period;
the adjustment time; and
the process time; and
an exposure unit configured to perform overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter.
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Accused Products
Abstract
An exposure system and method for use in an exposure tool. The system includes a compensation unit and an exposure unit. The compensation unit receives a fine-tuning value for an overlay correction parameter for a product in a first run. The compensation unit further receives an adjustment period for an exposure tool, an adjustment time for the exposure tool, and a process time for the product in a second run. The compensation unit also receives an equipment baseline offset of the exposure tool after adjustment, and compensates the fine-tuning value for the overlay correction parameter for the product accordingly. The exposure tool performs overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter.
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Citations
23 Claims
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1. An exposure system, comprising:
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a compensation unit configured to; receive a fine-tuning value for an overlay correction parameter for a product in a first run; receive an adjustment period for an exposure tool; receive an adjustment time for the exposure tool; receive a process time for the product in a second run, the second run being subsequent to the first run; receive an equipment baseline offset of the exposure tool after adjustment; and compensate the fine-tuning value for the overlay correction parameter for the product according to; the original fine-tuning value; the equipment baseline offset; the adjustment period; the adjustment time; and the process time; and an exposure unit configured to perform overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An exposure method, comprising the steps of:
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receiving a fine-tuning value for an overlay correction parameter for a product in a first run; receiving an adjustment period for an exposure tool; receiving an adjustment time for the exposure tool; receiving a process time for the product in a second run, the second run being subsequent to the first run; receiving an equipment baseline offset of the exposure tool after adjustment; compensating the fine-tuning value for the overlay correction parameter for the product according to; the original fine-tuning value; the equipment baseline offset; the adjustment period; the adjustment time; and the process time; and performing overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A machine-readable storage medium storing a computer program which, when executed, directs a computer to perform a method comprising the steps of:
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receiving a fine-tuning value for an overlay correction parameter for a product in a first run; receiving an adjustment period for an exposure tool; receiving an adjustment time for the exposure tool; receiving a process time for the product in a second run, the second run being subsequent to the first run; receiving an equipment baseline offset of the exposure tool after adjustment; compensating the fine-tuning value for the overlay correction parameter for the product according to; the original fine-tuning value; the equipment baseline offset; the adjustment period; the adjustment time; and the process time; and performing overlay processes on a wafer according to the compensated fine-tuning value for the overlay correction parameter. - View Dependent Claims (14, 15, 16, 17, 18)
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19. In a semiconductor manufacturing process with a first run and a second run, a method comprising the steps of:
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receiving a fine-tuning value, CET(Fn-1), for the first run; receiving an equipment baseline offset, Δ
MS;receiving a process time, T(CET(Fn-1)), for the second run; receiving an adjustment time, T(PMi-1), for a first preventative maintenance of an exposure tool; receiving an adjustment period, T(period), for the exposure tool; compensating the fine-tuning value according to - View Dependent Claims (20)
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21. In a semiconductor manufacturing process with a first run and a second run, an apparatus comprising:
- means for receiving a fine-tuning value, CET(Fn-1), for the first run;
means for receiving an equipment baseline offset, Δ
MS;means for receiving a process time, T(CET(Fn-1)), for the second run; means for receiving an adjustment time, T(PMi-1), for a first preventative maintenance of an exposure tool; means for receiving an adjustment period, T(period), for the exposure tool; means for compensating the fine-tuning value according to - View Dependent Claims (22)
- means for receiving a fine-tuning value, CET(Fn-1), for the first run;
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23. In a semiconductor manufacturing process with a first run and a second run, a compensation unit configured to receive a fine-tuning value for the first run, the compensation unit further being configured to receive an equipment baseline offset, the compensation unit further being configured to receive a process time for the second run, the compensation unit further being configured to receive an adjustment time for the second run, the compensation unit further being configured to receive an adjustment period for an exposure tool, the compensation unit further being configured to compensate the fine-tuning value according to
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( F n - 1 ) = CET ( F n - 1 ) - ( Δ MS × T ( CET ( F n - 1 ) ) - T ( PM i - 1 ) T ( period ) ) ; wherein CET′
(Fn-1) is the compensated fine-tuning value;wherein CET(Fn-1) is the fine-tuning value for the first run; wherein Δ
MS is the equipment baseline offset;wherein T(CET(Fn-1)) is the process time for the second run; wherein T(PMi-1) is the adjustment time for a first preventative maintenance of the exposure tool; and wherein T(period) is the adjustment period for the exposure tool.
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Specification