In-situ critical dimension measurement
First Claim
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1. A method of monitoring a critical dimension of a structural element in an integrated circuit, comprising the following steps:
- (a) collecting at least one optical interference endpoint signal produced during etching one or more layers to forms aid structural element;
(b) determining based upon said at least one optical interference endpoint signal the critical dimension of said structural element; and
(c) outputting the determined critical dimension of said structural element.
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Abstract
A method of monitoring a critical dimension of a structural element in an integrated circuit is provided comprising the following steps: collecting an optical interference endpoint signal produced during etching one or more layers to form the structural element; and determining based upon the optical interference endpoint signal the critical dimension of the structural element.
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Citations
20 Claims
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1. A method of monitoring a critical dimension of a structural element in an integrated circuit, comprising the following steps:
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(a) collecting at least one optical interference endpoint signal produced during etching one or more layers to forms aid structural element; (b) determining based upon said at least one optical interference endpoint signal the critical dimension of said structural element; and (c) outputting the determined critical dimension of said structural element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of monitoring a dimension of a structural element in an integrated circuit, comprising the following steps:
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(a) collecting at least one optical interference endpoint signal produced during monitoring of etching one or more layers to form a structural element in said integrated circuit, wherein said interference endpoint signal comprises an oscillating signal with a peak or trough amplitude that changes during said etching of said one or more layers; (b) determining based upon said optical interference endpoint signal the dimension of said structural element, wherein said determining step comprises comparing data retrieved from said optical interference endpoint signal against a library of optical interference endpoint data correlated to structural element dimensions, wherein said dimension of said structural element is a width of said structural element; and (c) outputting the determined dimension of said structural element. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A system for monitoring a dimension of a structural element of an integrated circuit, comprising:
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(a) an etch tool comprising an etch depth monitoring tool comprising an optical source and at least one photodetector for collecting at least one optical interference endpoint signal produced during monitoring of etching one or more layers to form a structural element in said integrated circuit, wherein said at least one interference endpoint signal comprises an oscillating signal with a peak or trough amplitude that during said etching of said one or more layers; and (b) means for comparing data retrieved from said at least one optical interference endpoint signal against a library of optical interference endpoint data correlated to structural element dimensions, whereby said dimension is determined, wherein said dimension of the structural element is a width of said structural element.
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Specification