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In-situ critical dimension measurement

  • US 7,301,645 B2
  • Filed: 02/07/2005
  • Issued: 11/27/2007
  • Est. Priority Date: 08/31/2004
  • Status: Expired due to Fees
First Claim
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1. A method of monitoring a critical dimension of a structural element in an integrated circuit, comprising the following steps:

  • (a) collecting at least one optical interference endpoint signal produced during etching one or more layers to forms aid structural element;

    (b) determining based upon said at least one optical interference endpoint signal the critical dimension of said structural element; and

    (c) outputting the determined critical dimension of said structural element.

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