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Method for programming of multi-state non-volatile memory using smart verify

  • US 7,301,817 B2
  • Filed: 10/27/2005
  • Issued: 11/27/2007
  • Est. Priority Date: 10/27/2005
  • Status: Active Grant
First Claim
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1. A method for programming non-volatile storage, comprising:

  • programming, in a set of non-volatile storage elements, at least first and second subsets of non-volatile storage elements having respective threshold voltages that fall within a first threshold voltage distribution, so that a threshold voltage of at least a first non-volatile storage element of the first subset transitions to a second threshold voltage distribution which overlaps with the first threshold voltage distribution, and a threshold voltage of at least a second non-volatile storage element of the second subset transitions to a third threshold voltage distribution which is outside of the first and second threshold voltage distributions;

    tracking the threshold voltage of the at least a first non-volatile storage element to determine when it has transitioned to the second threshold voltage distribution; and

    determining when to initiate a verification process for verifying when the threshold voltage of the at least a second non-volatile storage element has transitioned to the third threshold voltage distribution, responsive to the tracking.

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