Physical quantity sensor having movable portion
First Claim
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1. An angular rate sensor comprising:
- a support substrate;
a semiconductor layer supported on the support substrate; and
a movable portion disposed in the semiconductor layer, whereinthe movable portion is movably supported on the support substrate,the movable portion includes a driving vibration portion and a detecting vibration portion,the driving vibration portion is capable of vibrating in a first direction,the detecting vibration portion is capable of vibrating in a second direction by angular velocity applied to the sensor,the second direction is perpendicular to the first direction,the driving vibration portion includes a plurality of through holes, which penetrate in a thickness direction of the semiconductor layer,the detecting vibration portion includes a plurality of through holes, which penetrate in the thickness direction of the semiconductor layer,each through hole of the driving vibration portion has an elongated shape extending in the first direction, andeach through hole of the detecting vibration portion has an elongated shape extending in the second direction.
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Abstract
An angular rate sensor includes: a support substrate; a semiconductor layer; and a movable portion. The movable portion includes a driving vibration portion and a detecting vibration portion. The driving vibration portion is capable of vibrating in a first direction. The detecting vibration portion is capable of vibrating in a second direction. The driving vibration portion includes through holes, and the detecting vibration portion includes thorough holes. Each through hole of the driving vibration portion has an elongated shape extending in the first direction. Each through hole of the detecting vibration portion has an elongated shape extending in the second direction.
23 Citations
12 Claims
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1. An angular rate sensor comprising:
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a support substrate; a semiconductor layer supported on the support substrate; and a movable portion disposed in the semiconductor layer, wherein the movable portion is movably supported on the support substrate, the movable portion includes a driving vibration portion and a detecting vibration portion, the driving vibration portion is capable of vibrating in a first direction, the detecting vibration portion is capable of vibrating in a second direction by angular velocity applied to the sensor, the second direction is perpendicular to the first direction, the driving vibration portion includes a plurality of through holes, which penetrate in a thickness direction of the semiconductor layer, the detecting vibration portion includes a plurality of through holes, which penetrate in the thickness direction of the semiconductor layer, each through hole of the driving vibration portion has an elongated shape extending in the first direction, and each through hole of the detecting vibration portion has an elongated shape extending in the second direction. - View Dependent Claims (2, 3, 4, 5)
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6. A physical quantity sensor comprising:
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a support substrate; a movable portion supported on the support substrate in such a manner that the movable portion is movable in a horizontal direction of the substrate when physical quantity is applied to the sensor; a periphery frame portion disposed around the movable portion and fixed on the support substrate; a semiconductor layer supported on the support substrate, wherein, the movable portion and the periphery frame portion are provided by the semiconductor layer, the movable portion includes a driving vibration portion and a detecting vibration portion, the driving vibration portion is capable of vibrating in a first direction, the detecting vibration portion is capable of vibrating in a second direction by the physical quantity applied to the sensor, the second direction is perpendicular to the first direction, the driving vibration portion includes a plurality of through holes, which penetrate in a thickness direction of the semiconductor layer, the detecting vibration portion includes a plurality of through holes, which penetrate in the thickness direction of the semiconductor layer, each through hole of the driving vibration portion has an elongated shape extending in the first direction, and each through hole of the detecting vibration portion has an elongated shape extending in the second direction, the physical quantity is detected on the basis of a displacement of the movable portion when the physical quantity is applied to the sensor, and the periphery frame portion has an electric potential higher than an electrical potential of the support substrate and an electrical potential of the movable portion. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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Specification
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Current AssigneeDENSO Corporation, Nippon Soken, Inc.
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Original AssigneeDENSO Corporation, Nippon Soken, Inc.
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InventorsIto, Takeshi, Murata, Minoru
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Primary Examiner(s)CHAPMAN JR, JOHN E
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Application NumberUS11/201,271Publication NumberTime in Patent Office845 DaysField of Search735/041.2, 735/041.4US Class Current73/504.14CPC Class CodesG01C 19/5719 using planar vibrating mass...
