Semiconductor device including MOSFET having band-engineered superlattice
First Claim
1. A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers; and
forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers;
each group of layers of the superlattice comprising a plurality of stacked silicon atomic layers defining a silicon portion and an energy band-modifying layer thereon;
the energy-band modifying layer comprising at least one oxygen atomic layer constrained within a crystal lattice of adjacent silicon portions, and at least some silicon atoms from opposing silicon portions being chemically bound together with the chemical bonds traversing the at least one oxygen atomic layer therebetween.
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Accused Products
Abstract
A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.
114 Citations
11 Claims
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1. A method for making a semiconductor device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers; and forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers; each group of layers of the superlattice comprising a plurality of stacked silicon atomic layers defining a silicon portion and an energy band-modifying layer thereon; the energy-band modifying layer comprising at least one oxygen atomic layer constrained within a crystal lattice of adjacent silicon portions, and at least some silicon atoms from opposing silicon portions being chemically bound together with the chemical bonds traversing the at least one oxygen atomic layer therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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- Resources
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Current AssigneeAtomera Incorporated
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Original AssigneeMears Technologies Incorporated
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InventorsDukovski, Ilija, Hytha, Marek, Mears, Robert J., Kreps, Scott A., Yiptong, Jean Augustin Chan Sow Fook
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Primary Examiner(s)Pham; Long
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Application NumberUS11/089,950Publication NumberTime in Patent Office984 DaysField of Search438/197, 438/102US Class Current438/197CPC Class CodesH01L 21/823807 with a particular manufactu...H01L 29/1054 with a variation of the com...H01L 29/152 with quantum effects only i...H01L 29/155 Comprising only semiconduct...H01L 29/7833 with lightly doped drain or...
