Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
First Claim
1. A method for ion implanting a species at a desired implant depth in a workpiece, comprising:
- placing said workpiece on a workpiece support in a chamber with said workpiece being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling;
introducing into said chamber a process gas comprising the species to be implanted in said workpiece;
generating from said process gas a plasma by inductively coupling RF source power into said processing zone from an RF source power generator through an inductively coupled RF power applicator;
applying an RF bias from an RF bias generator to said workpiece support; and
controlling ion implantation depth of said species in said workpiece by setting said RF bias to a level corresponding to said desired implant depth.
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Accused Products
Abstract
A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.
193 Citations
84 Claims
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1. A method for ion implanting a species at a desired implant depth in a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said workpiece being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said workpiece; generating from said process gas a plasma by inductively coupling RF source power into said processing zone from an RF source power generator through an inductively coupled RF power applicator; applying an RF bias from an RF bias generator to said workpiece support; and controlling ion implantation depth of said species in said workpiece by setting said RF bias to a level corresponding to said desired implant depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84)
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Specification