Optical device, surface emitting type device and method for manufacturing the same

• US 7,306,961 B2
• Filed: 04/24/2006
• Issued: 12/11/2007
• Est. Priority Date: 09/22/2000
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nunoue, Shin-Ya, Ishikawa, Masayuki
• Primary Examiner(s): Kebede, Brook
• Application Number:
  US11/409,045
• Publication Number:
  US 20060186426A1
• Time in Patent Office: 596 Days
• Field of Search: 438/22, 438/24, 438/28, 438/29, 438/34, 438/40, 438 41- 44, 438/46, 438/47, 257/79, 257/98, 257/102, 257/103, 257/E51.021, 257/E33.068, 257/E33.069
• US Class Current: 438/29
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18363 comprising air layers
• CPC Class Codes: H01S 5/209 special etch stop layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

Claims

1. A method for manufacturing an optical device comprising a reflector for reflecting light, said reflector is formed by steps comprising:

forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternately laminated; and

heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of said semiconductor layers.

2. A method for manufacturing an optical device according to claim 1, wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.

3. A method for manufacturing an optical device according to claim 1, wherein said first nitride semiconductor is Al_xGa_1-xN (0≦

x≦

1) and wherein said second nitride semiconductor is Al_yGa_1-yN (0≦

y<

x) or In_zGa_1-zN (0≦

z≦

1).

4. A method for manufacturing an optical device comprising a reflector for reflecting light, said reflector is formed by steps comprising:

forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride, are alternately laminated;

heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of semiconductor layers; and

forming organic layers in said gaps.

5. A method for manufacturing an optical device according to claim 4, wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.

6. A method for manufacturing an optical device according to claim 4, wherein said first nitride semiconductor is Al_xGa_1-xN (0≦

x≦

1) and wherein said second nitride semiconductor is Al_yGa_1-yN (0≦

y<

x) or In_zGa_1-zN (0≦

z≦

1).

7. A method for manufacturing a surface emitting type device in which a first reflector for reflecting light from an active layer of said surface emitting type device and a second reflector for reflecting light from said active layer are disposed to sandwich said active layer, at least one of said first reflector and said second reflector is formed by steps comprising:

forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternately laminated; and

heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of semiconductor layers.

8. A method for manufacturing an optical device according to claim 7, wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.

9. A method for manufacturing a surface emitting type device according to claim 7, wherein said first nitride semiconductor is Al_xGa_1-xN (0≦

x≦

1) and wherein said second nitride semiconductor is Al_yGa_1-yN (0≦

y<

x) or In_zGa_1-zN (0≦

z≦

1).

11. A method for manufacturing an optical device according to claim 7, wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.

10. A method for manufacturing a surface emitting type device in which a first reflector for reflecting light from an active layer of said surface emitting type device and a second reflector for reflecting light from said active layer are disposed to sandwich said active layer, at least one of said first reflector and said second reflector is formed by steps comprising:

forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternatively laminated;

heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form a gap between neighboring semiconductor layers; and

forming organic layers in said gaps.

12. A method for manufacturing a surface emitting type device according to claim 10, wherein said first nitride semiconductor is Al_xGa_1-xN (0≦

x≦

1) and wherein said second nitride semiconductor is Al_yGa_1-yN (0≦

y<

x) or In_zGa_1-zN (0≦

z≦

1).