Method of manufacturing a vertically-structured GaN-based light emitting diode
First Claim
1. A method of manufacturing a vertically-structured GaN-based light emitting diode comprising:
- forming a GaN layer on a substrate;
forming a compound layer on the GaN layer in order to perform an epitaxial lateral over-growth (ELOG) process;
patterning the compound layer in a predetermined shape;
forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;
forming a structure supporting layer on the p-type GaN layer;
sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer;
removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and
forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
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Abstract
The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
6 Citations
13 Claims
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1. A method of manufacturing a vertically-structured GaN-based light emitting diode comprising:
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forming a GaN layer on a substrate; forming a compound layer on the GaN layer in order to perform an epitaxial lateral over-growth (ELOG) process; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;
forming a structure supporting layer on the p-type GaN layer;sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification
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- Resources
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electro-Mechanics Co., Ltd. (Samsung Group)
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InventorsLee, Jae Hoon, Choi, Hee Seok, Oh, Jeong Tak, Lee, Su Yeol
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Primary Examiner(s)Vu, David
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Application NumberUS11/430,990Publication NumberTime in Patent Office580 DaysField of Search438/22, 438/406, 438/455, 438/458, 438/29, 438 46- 48, 438/974, 257/13, 257/79, 257/87, 257/101, 257/102, 257/97, 257/103, 257/90, 257/E21.133US Class Current438/48CPC Class CodesH01L 2933/0083 Periodic patterns for optic...H01L 33/0093 Wafer bonding; Removal of t...H01L 33/20 with a particular shape, e....H01L 33/22 Roughened surfaces, e.g. at...
