Nanowire interconnection and nano-scale device applications
First Claim
1. A nano-colonnade structure comprising:
- a first layer of a semiconductor material having a (111) horizontal surface;
a second layer;
an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and
a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nanowire column is spaced from the insulator support, such that a gap between the nanowire column and the insulator support is provided, and wherein the nanowire column is an inorganic material.
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Accused Products
Abstract
A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.
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Citations
20 Claims
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1. A nano-colonnade structure comprising:
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a first layer of a semiconductor material having a (111) horizontal surface; a second layer; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nanowire column is spaced from the insulator support, such that a gap between the nanowire column and the insulator support is provided, and wherein the nanowire column is an inorganic material. - View Dependent Claims (2, 3, 6, 7, 8, 9)
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4. A nano-colonnade structure comprising:
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a first layer of a semiconductor material having a (111) horizontal surface; a second layer; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nano-colonnade structure is an array of nano-scale colonnade devices supported by the first layer, the away having physically separated segments of the second layer, wherein each colonnade device comprises the first layer, a different segment of the second layer having a respective overhanging portion, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment, and wherein the second layer is a semiconductor material, the nano-colonnade array further comprising; a first contact pad on the (111) horizontal surface of the first layer spaced from the nanowire columns out from under the overhanging portions; and a second contact pad on a horizontal surface of each of the segments that is opposite the facing horizontal surface, the contact pads being an electrically conductive material, the first contact pad being a common electrode, the second contact pads being individual electrodes for separately addressing the devices of the array.
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5. A nano-colonnade structure comprising:
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a first layer of a semiconductor material having a (111) horizontal surface; a second layer; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nano-colonnade structure is an array of nano-scale colonnade devices supported by the first layer, the anay having physically separated segments of the second layer, wherein each colonnade device comprises the first layer, a different segment of the second layer having a respective overhanging portion, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment, and wherein the second layer segments having overhanging portions and the insulator support of the array form a first section, the nano-colonnade structure further comprising a second section that is a minor image of the first section on the first layer, the second section comprising minor image second layer segments having overhanging portions, a mirror image insulator support, and nanowire columns extending from the first layer to each mirror image second layer segment of the array, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap.
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10. A nano-colonnade structure comprising:
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a first layer of a semiconductor material having a (111) horizontal surface; a second layer; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the second layer with the overhanging portion and the insulator support form a first section, the nano-colonnade structure further comprising a second section that is a minor image of the first section on the first layer, the second section comprising a minor image second layer having an overhanging portion, a mirror image insulator support, and another nanowire column extending from the first layer to the mirror image second layer, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap. - View Dependent Claims (11, 12)
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13. A nano-colonnade structure comprising:
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a first layer of a semiconductor material having a (111) horizontal surface; a second layer; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the first layer comprises an integrated first Bragg reflector adjacent to the (111) horizontal surface, the second layer being a semiconductor material, the second semiconductor layer comprising an integrated second Bragg reflector adjacent to the facing horizontal surface, such that the nano-colonnade structure forms a nano-vertical cavity surface emitting laser (nano-VCSEL).
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14. An interconnected nano-colonnade structure comprising:
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a first nano-colonnade device; a second nano-colonnade device; and a first nanowire column that extends nearly vertically from a (111) horizontal surface of the first device to a (111) horizontal surface of the second device that faces the (111) horizontal surface to connect the first device to the second device. - View Dependent Claims (15, 16, 17, 20)
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18. A nano-colonnade laser structure comprising:
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a first semiconductor layer having a (111) horizontal surface, the first layer comprising a first integrated Bragg reflector; a second semiconductor layer comprising a second integrated Bragg reflector; an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and a semiconductor nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the Bragg reflectors and the nanowire column form a laser cavity of a nano-vertical cavity surface emitting laser (nano-VCSEL). - View Dependent Claims (19)
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Specification