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Nanowire interconnection and nano-scale device applications

  • US 7,307,271 B2
  • Filed: 11/05/2004
  • Issued: 12/11/2007
  • Est. Priority Date: 11/05/2004
  • Status: Expired due to Fees
First Claim
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1. A nano-colonnade structure comprising:

  • a first layer of a semiconductor material having a (111) horizontal surface;

    a second layer;

    an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

    a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nanowire column is spaced from the insulator support, such that a gap between the nanowire column and the insulator support is provided, and wherein the nanowire column is an inorganic material.

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