Nanowire interconnection and nano-scale device applications

• US 7,307,271 B2
• Filed: 11/05/2004
• Issued: 12/11/2007
• Est. Priority Date: 11/05/2004
• Status: Expired due to Fees

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Islam, M. Saif, Kuekes, Philip J., Wang, Shih-Yuan, Stewart, Duncan R., Sharma, Shashank
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US10/982,051
• Publication Number:
  US 20060097389A1
• Time in Patent Office: 1,131 Days
• Field of Search: 207/14
• US Class Current: 257/14
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 comprising a junction
• CPC Class Codes: H01S 5/0261 Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/341 Structures having reduced dimensionality, e.g. quantum wires
• CPC Class Codes: H01S 5/3412 quantum box or quantum dash
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/763 formed along or from crystallographic terraces or ridges
• CPC Class Codes: Y10S 977/764 with specified packing density
• CPC Class Codes: Y10S 977/938 Field effect transistors, FETS, with nanowire- or nanotube-channel region

Abstract

A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

Claims

1. A nano-colonnade structure comprising:

a first layer of a semiconductor material having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer, wherein the nanowire column is spaced from the insulator support, such that a gap between the nanowire column and the insulator support is provided, and wherein the nanowire column is an inorganic material.

2. The nano-colonnade structure of claim 1, wherein the nano-colonnade structure is an array of nano-scale colonnade devices supported by the first layer, the array having physically separated segments of the second layer, wherein each colonnade device comprises the first layer, a different segment of the second layer having a respective overhanging portion, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment.

3. The nano-colonnade structure of claim 2, wherein the first layer semiconductor is highly doped to form a common electrode, the second layer being either a highly doped semiconductor or a metal to form an electrode, the second layer segments being individual electrodes for separately addressing the devices of the affay.

6. The nano-colonnade structure of claim 1, wherein the nano-colonnade structure is an electronic circuit device, the first layer being highly doped, the second layer being either a highly doped semiconductor material or a conductive metal, the nanowire column optionally being doped.

7. The nano-colonnade structure of claim 1, further comprising

a first contact pad on the (111) horizontal surface of the first layer spaced from the nanowire column;

and

a second contact pad on a horizontal surface of the second layer opposite the facing horizontal surface, the contact pads being an electrically conductive material.

8. The nano-colonnade structure of claim 1, wherein the second layer is selected from a semiconductor material having any crystal orientation and a metal.

9. The nano-colonnade structure of claim 1, further comprising a substrate made of an insulating material that supports either the first semiconductor layer or the second layer.

4. A nano-colonnade structure comprising:

a first layer of a semiconductor material having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer,

wherein the nano-colonnade structure is an array of nano-scale colonnade devices supported by the first layer, the away having physically separated segments of the second layer, wherein each colonnade device comprises the first layer, a different segment of the second layer having a respective overhanging portion, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment, and

wherein the second layer is a semiconductor material, the nano-colonnade array further comprising;

a first contact pad on the (111) horizontal surface of the first layer spaced from the nanowire columns out from under the overhanging portions; and

a second contact pad on a horizontal surface of each of the segments that is opposite the facing horizontal surface, the contact pads being an electrically conductive material, the first contact pad being a common electrode, the second contact pads being individual electrodes for separately addressing the devices of the array.

5. A nano-colonnade structure comprising:

a first layer of a semiconductor material having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer,

wherein the nano-colonnade structure is an array of nano-scale colonnade devices supported by the first layer, the anay having physically separated segments of the second layer, wherein each colonnade device comprises the first layer, a different segment of the second layer having a respective overhanging portion, the insulator support between the first layer and the segment, and a nanowire column extending from the first layer to the respective overhanging portion of the second layer segment, and

wherein the second layer segments having overhanging portions and the insulator support of the array form a first section, the nano-colonnade structure further comprising a second section that is a minor image of the first section on the first layer, the second section comprising minor image second layer segments having overhanging portions, a mirror image insulator support, and nanowire columns extending from the first layer to each mirror image second layer segment of the array, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap.

10. A nano-colonnade structure comprising:

a first layer of a semiconductor material having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer,

wherein the second layer with the overhanging portion and the insulator support form a first section, the nano-colonnade structure further comprising a second section that is a minor image of the first section on the first layer, the second section comprising a minor image second layer having an overhanging portion, a mirror image insulator support, and another nanowire column extending from the first layer to the mirror image second layer, the second section facing the first section and being spaced from the first section, such that the respective overhanging portions are separated by a gap.

11. The nano-colonnade structure of claim 10, wherein further comprising an insulating material that fills the gap between the first section and the second section from the first layer to an external horizontal surface of the second layers.

12. The nano-colonnade structure of claim 11, wherein the insulating filler material in the gap and the respective insulator layer supports form opposite sides of a channel that houses the nanowire columns.

13. A nano-colonnade structure comprising:

a first layer of a semiconductor material having a (111) horizontal surface;

a second layer;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer,

wherein the first layer comprises an integrated first Bragg reflector adjacent to the (111) horizontal surface, the second layer being a semiconductor material, the second semiconductor layer comprising an integrated second Bragg reflector adjacent to the facing horizontal surface, such that the nano-colonnade structure forms a nano-vertical cavity surface emitting laser (nano-VCSEL).

14. An interconnected nano-colonnade structure comprising:

a first nano-colonnade device;

a second nano-colonnade device; and

a first nanowire column that extends nearly vertically from a (111) horizontal surface of the first device to a (111) horizontal surface of the second device that faces the (111) horizontal surface to connect the first device to the second device.

15. The nano-colonnade structure of claim 14, further comprising an insulating filler material in gaps between the first device and the second device, the filler material forming a channel around a location of the nanowire column.

16. The nano-colonnade structure of claim 14, wherein the first nano-colonnade device and the second nano-colonnade device each comprise:

a first layer of a semiconductor material having the (111) horizontal surface;

an insulator support;

a second layer separated from the first layer by the insulator support, the second layer hanging over a portion of the (111) horizontal surface of the first layer, such that a horizontal surface of the overhanging second layer is spaced from and faces the (111) horizontal surface of the first layer; and

a second nanowire column extending nearly vertically from the (111) horizontal surface of the first layer to the facing horizontal surface of the overhanging second layer, the second nanowire column connecting the first layer to the second layer.

17. The nano-colonnade structure of claim 16, wherein the first device and the second device are in a reverse stacked relationship, such that the (111) horizontal surfaces of the first layers of each device overhang and face each other, the first nanowire column interconnecting the respective first layers.

20. The nano-colonnade structure of claim 14, wherein the first nano-colonnade device and the second nano-colonnade device are in a reverse stacked relationship, such that the (111) horizontal surface of a first layer of each nano-colonnade device overhangs and faces each other, the first nanowire column interconnecting the respective first layers.

18. A nano-colonnade laser structure comprising:

a first semiconductor layer having a (111) horizontal surface, the first layer comprising a first integrated Bragg reflector;

a second semiconductor layer comprising a second integrated Bragg reflector;

an insulator support between the first layer and the second layer that separates the first layer from the second layer, a portion of the second layer overhanging the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer; and

a semiconductor nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface of the overhanging portion, such that the nanowire column connects the first layer to the second layer,

wherein the Bragg reflectors and the nanowire column form a laser cavity of a nano-vertical cavity surface emitting laser (nano-VCSEL).

19. The nano-colonnade laser structure of claim 18, wherein the first integrated Bragg reflector and the second integrated Bragg reflector are lattice matched to one or more of the first layer, the second layer, the insulator support and the nanowire column.