Micromachined electrode array

• US 7,308,317 B1
• Filed: 02/17/2005
• Issued: 12/11/2007
• Est. Priority Date: 04/28/2003
• Status: Active Grant

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Wessendorf, Kurt O., Okandan, Murat
• Primary Examiner(s): Mullen; Kristen D.
• Application Number:
  US11/060,473
• Time in Patent Office: 1,027 Days
• Field of Search: None
• US Class Current: 607/115
• CPC Class Codes: A61N 1/0543 Retinal electrodes

Abstract

An electrode array is disclosed which has applications for neural stimulation and sensing. The electrode array, in certain embodiments, can include a plurality of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. In other embodiments of the electrode array, the electrodes can be fixed to the substrate. The electrode array can be formed from a combination of bulk and surface micromachining, and can include electrode tips having an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis.

Claims

1. A micromachined electrode array, comprising:

(a) a monocrystalline silicon body;

(b) a plurality of electrodes formed, at least in part, from the monocrystalline silicon body, with each electrode extending outward substantially perpendicular to a plane of the monocrystalline silicon body;

(c) an electrically-insulating layer disposed over the monocrystalline silicon body to attach each electrode thereto; and

(d) addressing circuitry located above the electrically-insulating layer and connected to the plurality of electrodes through an electrically-conducting via formed through the electrically-insulating layer at the location of each electrode.

2. The micromachined electrode array of claim 1 further comprising a monocrystalline silicon layer disposed above the electrically-insulating layer, with a portion of the monocrystalline silicon layer being electrically connected to each electrode through the electrically-conducting via.

3. The micromachined electrode array of claim 2 further comprising a plurality of transistors formed in the monocrystalline silicon layer and operatively connected to the plurality of electrodes through the electrically-conducting via connected to each electrode.

4. The micromachined electrode array of claim 1 further comprising a plurality of transistors formed in the monocrystalline silicon body and operatively connected to the plurality of electrodes through the electrically-conducting via connected to each electrode.

5. The micromachined electrode array of claim 1 wherein the electrically-conducting via comprises a material selected from the group consisting of polycrystalline silicon, metals, and combinations thereof.

6. The micromachined electrode array of claim 1 wherein the electrically-insulating layer comprises silicon dioxide or silicon nitride.

7. The micromachined electrode array of claim 1 wherein each electrode is overcoated with a metal or an electrically-conducting metal oxide.

8. The micromachined electrode array of claim 7 wherein a majority of each electrode is further overcoated with an electrically-insulating biocompatible material.

9. The micromachined electrode array of claim 1 further comprising a flexible frame to hold the substrate.

10. An electrode array for neural stimulation, comprising:

(a) a silicon-on-insulator substrate; and

(b) a plurality of electrodes arranged in an array and protruding outward substantially normal to a major surface of the silicon-on-insulator substrate and connected thereto, with the electrodes being formed, at least in part, from the silicon-on-insulator substrate, and with each electrode comprising a monocrystalline silicon layer portion, a monocrystalline silicon body portion, and an intervening electrically-insulating layer of silicon dioxide, and with each electrode further comprising an electrically-conducting via formed through the intervening electrically-insulating layer of silicon dioxide to electrically connect the monocrystalline silicon layer portion to the monocrystalline silicon body portion.

11. The electrode array of claim 10 further comprising a plurality of springs connecting each electrode to the silicon-on-insulator substrate.

12. The electrode array of claim 11 wherein each spring comprises a folded spring.

13. The electrode array of claim 11 wherein each spring comprises a material selected from the group consisting polycrystalline silicon, metals, and combinations thereof.

14. The electrode array of claim 11 wherein each spring comprises monocrystalline silicon.

15. The electrode array of claim 10 wherein each electrode is overcoated with a metal or an electrically-conducting metal oxide.

16. The electrode array of claim 15 wherein a majority of each electrode is further overcoated with an electrically-insulating biocompatible material.

17. The electrode array of claim 10 further comprising addressing circuitry on the silicon-on-insulator substrate for electrically addressing each electrode.

18. The electrode array of claim 10 further comprising a flexible frame to hold the silicon-on-insulator substrate in contact with a neural surface.

19. The electrode array of claim 10 further comprising means for sensing a contact force for at least one of the electrodes when the electrode array is urged into contact with a neural surface.

20. The electrode array of claim 10 further comprising a plurality of transistors formed on the silicon-on-insulator substrate.

21. A micromachined electrode array, comprising:

(a) a silicon-on-insulator substrate further comprising a monocrystalline silicon body and a monocrystalline silicon layer supported above the monocrystalline silicon body and separated therefrom by an intervening electrically-insulating layer of silicon dioxide; and

(b) a plurality of electrodes spaced apart from each other and formed, at least in part, from the silicon-on-insulator substrate, with the plurality of electrodes protruding outward substantially normal to a major surface of the silicon-on-insulator substrate, and with each electrode being electrically isolated from adjacent electrodes while being mechanically and electrically connected to the silicon-on-insulator substrate, and with each electrode having an electrically-conducting via through the electrically-insulating layer of silicon dioxide to connect a monocrystalline silicon layer portion of that electrode to a monocrystalline silicon body portion thereof.

22. The micromachined electrode array of claim 21 further comprising a plurality of springs to mechanically and electrically connect each electrode to the silicon-on-insulator substrate.

23. The micromachined electrode array of claim 22 wherein each spring comprises a material selected from the group consisting of polycrystalline silicon, metals, and combinations thereof.

24. The micromachined electrode array of claim 22 wherein each spring is formed, at least in part, from the monocrystalline silicon layer.

25. The micromachined electrode array of claim 22 wherein each spring comprises a folded spring.

26. The micromachined electrode array of claim 21 wherein the electrically-conducting via comprises a material selected from the group consisting of polycrystalline silicon, metals, and combinations thereof.

27. The micromachined electrode array of claim 21 wherein each electrode is overcoated with a metal or an electrically-conducting metal oxide.

28. The micromachined electrode array of claim 27 wherein a majority of each electrode is further overcoated with an electrically-insulating biocompatible material.

29. The micromachined electrode array of claim 21 further comprising addressing circuitry on the silicon-on-insulator substrate for electrically addressing each electrode.

30. The micromachined electrode array of claim 21 further comprising means for sensing a contact force for at least one of the electrodes when the micromachined electrode array is urged into contact with a surface.

31. The micromachined electrode array of claim 21 further comprising a plurality of transistors formed on the silicon-on-insulator substrate.

32. The micromachined electrode array of claim 21 further comprising a flexible frame to hold the silicon-on-insulator substrate.