Method of managing a multi-bit cell flash memory with improved reliablility and performance
First Claim
1. A method of storing data, the method comprising the steps of:
- (a) providing a flash memory device including a single flash memory die including a plurality of memory cells, wherein each of said memory cells is capable of storing a plurality of data bits;
(b) storing first data bits into at least one of said memory cells, said at least one memory cell allocated to at least one page and said at least one memory cell used for storing M bits per cell; and
(c) storing second data bits into at least one other of said memory cells, said at least one other cell allocated to said at least one page, and said at least one other memory cell used for storing N bits per cell;
wherein said storing first data bits and said storing second data bits are performed at the same time using the same at least one writing operation, wherein N is less than M.
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Accused Products
Abstract
A method of storing data by providing a flash memory device including a plurality of memory cells; each of the memory cells is capable of storing data bits. First data bits are stored into memory cells used for storing M bits per cell, the memory cells are allocated to a page of the memory. Second data bits are stored into other memory cells, the other memory cells used for storing N bits per cell are allocated to the page and upon storing of the first data bits and upon storing the second data bits, the page uses at the same time at least one of the memory cells with M bits per cell and at least one of the other memory cells with N bits per cell with N less than M.
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Citations
31 Claims
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1. A method of storing data, the method comprising the steps of:
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(a) providing a flash memory device including a single flash memory die including a plurality of memory cells, wherein each of said memory cells is capable of storing a plurality of data bits; (b) storing first data bits into at least one of said memory cells, said at least one memory cell allocated to at least one page and said at least one memory cell used for storing M bits per cell; and (c) storing second data bits into at least one other of said memory cells, said at least one other cell allocated to said at least one page, and said at least one other memory cell used for storing N bits per cell; wherein said storing first data bits and said storing second data bits are performed at the same time using the same at least one writing operation, wherein N is less than M. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of reading stored data, the method comprising the steps of:
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(a) providing a flash memory device including a single flash memory die including a plurality of memory cells, wherein each of said memory cells is capable of storing M data bits, wherein M is an integer greater than one; and b) reading in a single command a single bit respectively from each of said memory cells of a page, wherein said single bit read from one of said memory cells is valid only when less than M bits are stored in said one memory cell. - View Dependent Claims (16)
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15. A method of reading stored data, the method comprising the steps of:
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(a) providing a flash memory device including a single flash memory die including a plurality of memory cells, wherein each of said memory cells is capable of storing M data bits, wherein M is an integer greater than one; and (b) providing a read command for reading a group of said cells, wherein said read command always performs a single voltage comparison on each said memory cell of said group.
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17. A flash memory device comprising:
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(a) a plurality of memory cells in a single flash memory die, wherein each of said memory cells is capable of storing a plurality of data bits; and (b) a controller which stores first data bits in at least one of said memory cells said at least one cell storing M bits per cell; and
second data bits in at least one other of said memory cells, said at least one other cell storing N bits per cell;
wherein said at least one memory cell is allocated to at least one page, wherein said at least one other cell is allocated to said at least one page, wherein the same at least one writing operation is used for storing at the same time M bits per cell in at least one of said memory cells and N bits per cell in at least one of said other memory cells, wherein N is less than M. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A flash memory device comprising:
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(a) a plurality of memory cells in a single flash memory die, wherein each of said memory cells is capable of storing M data bits, wherein M is an integer greater than one; and b) a mechanism for reading in a single command a single bit respectively from any of said memory cells of a page, wherein said single bit read from one of said memory cells is valid only when less than M bits are stored in said one memory cell. - View Dependent Claims (28)
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29. A flash memory device comprising:
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(a) a plurality of memory cells in a single flash memory die, wherein each of said memory cells is capable of storing M data bits, wherein M is an integer greater than one; and (b) a mechanism for providing a read command for reading a group of said cells wherein said read command always performs a single voltage comparison on each said memory cell of said group. - View Dependent Claims (30)
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31. A method of storing data, the method comprising the steps of
(a) providing a flash memory device including a single flash die including a plurality of memory cells, wherein each of said memory cells is capable of being put into any one of a plurality of cell states; -
(b) storing first data bits into at least one of said memory cells, said at least one memory cell allocated to at least one page, and said storing first data bits making use of M of said plurality of cell states; (c) storing second data bits into at least one other of said memory cells, said at least one other memory cell allocated to said at least one page, and said storing second data bits making use of N of said plurality of cell states; and wherein said storing first data bits and said storing second data bits is performed at the same time using the same at least one writing operation, and wherein N is less than M.
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Specification