Integrated gyroscope and temperature sensor

• US 7,308,827 B2
• Filed: 03/02/2005
• Issued: 12/18/2007
• Est. Priority Date: 03/02/2005
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: United States Of America As Represented By The Secretary Of The Army (Government of the United States of America)
• Inventors: Holt, Sherrie Burgett, Kranz, Michael S.
• Primary Examiner(s): Williams, Hezron
• Assistant Examiner(s): BELLAMY, TAMIKO D
• Application Number:
  US11/070,509
• Publication Number:
  US 20060196266A1
• Time in Patent Office: 1,021 Days
• Field of Search: 735/040.2, 735/041.1, 735/041.2, 735/033, 735/040.3, 735/040.4, 735/040.8, 735/041.3, 735/041.4, 735/041.5, 735/041.8
• US Class Current: 73/504.02
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

A gyroscope and temperature sensor are formed on a single chip using SOI-MEMS technology. The temperature sensor has an array of resistors to accurately detect the temperature of the gyroscope in temperatures and conditions that can range from extreme heat to extreme cold. The positioning of the gyroscope and temperature sensor on the same chip allow for extremely accurate real-time feedback of the gyroscope'"'"'s temperature for utilization by a control system.

Claims

1. A device for determining an angular rotation and/or angular rotation rate of a body, said device comprising:

a substrate;

a gyroscope formed above said substrate; and

a temperature sensor formed above said substrate for sensing the temperature of said gyroscope; and

wherein said temperature sensor has a plurality of resistors that are formed above a substrate surface of said substrate.

2. A device according to claim 1, wherein said substrate is a silicon substrate.

3. A device according to claim 1, wherein said gyroscope is formed from silicon in a MEMS manufacturing process.

4. A device according to claim 1, wherein said temperature sensor is formed from silicon in a MEMS fabrication process.

5. A device according to claim 2, wherein said gyroscope has a proof mass attached to said substrate by a plurality of flexures.

6. A device according to claim 1, wherein each of said plurality of resistors has a beam portion that lies above the base surface of said substrate such that a gap exists between the recess of said substrate and said beam portion of each of said plurality of resistors.

7. A device according to claim 6, wherein one end of said beam portion is supported by and connected to a respective electrically conductive anchor and the other end of said beam portion is supported by a respective insulated support.

8. A device according to claim 1, wherein the plurality of resistors vary in resistance.

9. A device according to claim 7, wherein said other end of said beam portion is a folded region having three times the thickness of said beam portion.

10. A device according to claim 1, wherein said substrate is a silicon substrate, said gyroscope is formed of silicon and said temperature sensor is made of a plurality of resistors formed of silicon, said device being fabricated by a SOI-MEMS process.

11. A device according to claim 10, wherein, said plurality of resistors provide an accurate measurement of temperature over a wide temperature range.

12. A device according to claim 10, wherein said gyroscope and said temperature sensor are electrically connected, said gyroscope and said temperature sensor being electrically connected to a CPU.

13. A device for measuring motion of an object, comprising:

a substrate;

means for detecting motion of the object, said means for detecting motion being formed above said substrate;

a temperature sensor electrically connected to said means for detecting motion, said temperature sensor being formed above said substrate such that a gap exists between said temperature sensor and said substrate; and

said temperature sensor comprises at least one resistor having two beams that are electrically connected to an anchor at one end and which form a folded region at another end, said folded region being supported by a non-conductive support.

14. A device according to claim 13, wherein:

said means for detecting motion comprises a proof mass, said proof mass connecting to said substrate by a plurality of flexures.

15. A device according to claim 14, wherein:

said temperature sensor comprises a plurality of resistors with a beam portion of each of said resistors extending above a base substrate surface of said substrate, said beam portion connecting to an electrically conductive anchor that connects to said substrate.

16. A device according to claim 14, wherein:

said folded region is three times thicker than the thickness of each said two beams.

17. A device according to claim 15, wherein:

said substrate, said means for detecting motion, and said temperature sensor are comprised of silicon.